Tao Liu , Gang Wu , Yongqing Huang , Taoxiang Yang , Xiuhua Zeng , Meiling Shi , Huijuan Niu , Wenjing Fang
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引用次数: 0
Abstract
Significant discrepancies were found between experimental results and the results calculated by the conventional physics-based model for the cutoff frequency and some equivalent circuit parameters of double heterojunction bipolar transistors (DHBT). In order to accurately evaluate the primary quantitative performance of DHBT, a comprehensive physics-based model was developed and validated by comparing experimental data from three research institutions. The proposed physics-based model combines the equivalent circuit of the T-topology and hybrid-π topology, and includes modification formulas for estimating the intrinsic dynamic resistance of the base–collector and base-emitter junctions, as well as the cutoff frequency, the hybrid-π input capacitance, and the gain.
在双异质结双极晶体管（DHBT）的截止频率和一些等效电路参数方面，发现实验结果与基于物理的传统模型计算出的结果存在显著差异。为了准确评估 DHBT 的主要定量性能，我们开发了一个基于物理的综合模型，并通过比较三个研究机构的实验数据进行了验证。所提出的基于物理的模型结合了 T 型拓扑和混合π型拓扑的等效电路，包括用于估算基极-集电极结和基极-发射极结的本征动态电阻、截止频率、混合π型输入电容和增益的修正公式。
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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