Recessed Trench Gate AlGaN/GaN HEMT for pH Monitoring: Design and Sensitivity Evaluation

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2024-07-02 DOI:10.1109/tnano.2024.3422181

Ritu Poonia, Lava Bhargava, Aasif Mohammad Bhat, C. Periasamy

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用于 pH 值监测的凹槽栅 AlGaN/GaN HEMT：设计和灵敏度评估

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.

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