Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2024-07-01 DOI:10.1109/TNANO.2024.3421263

Been Kwak;Daewoong Kwon;Hyunwoo Kim

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引用次数: 0

Abstract

This study introduces a ferroelectric tunnel field-effect transistor (Fe-TFET) capable of implementing three types of signal processing for frequency doubler, phase shifter, and signal follower. In addition, we verify its I/O characteristics using technology computer-aided design simulations. The proposed Fe-TFET has bidirectional tunneling currents as an inherent TFET characteristic, and the ferroelectric layer's polarization adjusts the device's threshold voltage ( V _TH ). Depending on the degree of polarization by program voltage, the device operating within the input signal range of −0.5 to 0.5 V can be determined by the following current components: 1) source-to-channel tunneling current (I _SC ), 2) channel-to-drain currents ( I _CD ), and 3) I _SC and I _CD . Then, through the mixed-mode circuit simulations, the I/O characteristics from each program condition are confirmed with 1) frequency doubler, 2) phase shifter, and 3) signal follower characteristics using a single Fe-TFET-based circuit. In addition, an investigation of the impact of frequency variations on the three modes reveals no attenuations in output signals. Consequently, the simple configuration and low power consumption, as opposed to conventional signal processing circuit, make the proposed processing method more suitable for analog circuit design.

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基于铁电隧道场效应晶体管的信号处理应用

本研究介绍了一种铁电隧道场效应晶体管（Fe-TFET），它能够实现倍频器、移相器和信号跟随器三种类型的信号处理。此外，我们还利用技术计算机辅助设计模拟验证了其输入/输出特性。拟议的 Fe-TFET 具有双向隧道电流这一 TFET 固有特性，铁电层的极化可调节器件的阈值电压 (VTH)。根据程序电压的极化程度，器件在-0.5 至 0.5 V 输入信号范围内的工作状态可由以下电流分量决定：1) 源极到沟道的隧道电流 (ISC)；2) 沟道到漏极的电流 (ICD)；3) ISC 和 ICD。然后，通过混合模式电路仿真，利用基于单个 Fe-TFET 电路的 1）倍频器、2）移相器和 3）信号跟随器特性，确认了每个程序条件下的 I/O 特性。此外，在研究频率变化对三种模式的影响时发现，输出信号没有衰减。因此，与传统的信号处理电路相比，拟议的处理方法配置简单、功耗低，更适合模拟电路设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.