Noncontact Characterization of Carrier Mobility in Long-Wave Infrared HgCdTe Films With Terahertz Time-Domain Spectroscopy

IF 3.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Terahertz Science and Technology Pub Date : 2024-04-25 DOI:10.1109/TTHZ.2024.3393627

Nils B. Refvik;Charles E. Jensen;David N. Purschke;Wenwu Pan;Howe R. J. Simpson;Wen Lei;Renjie Gu;Jarek Antoszewski;Gilberto A. Umana-Membreno;Lorenzo Faraone;Frank A. Hegmann

{"title":"Noncontact Characterization of Carrier Mobility in Long-Wave Infrared HgCdTe Films With Terahertz Time-Domain Spectroscopy","authors":"Nils B. Refvik;Charles E. Jensen;David N. Purschke;Wenwu Pan;Howe R. J. Simpson;Wen Lei;Renjie Gu;Jarek Antoszewski;Gilberto A. Umana-Membreno;Lorenzo Faraone;Frank A. Hegmann","doi":"10.1109/TTHZ.2024.3393627","DOIUrl":null,"url":null,"abstract":"We use terahertz time-domain spectroscopy to measure the complex dielectric function of long-wave infrared Hg\n1-\n<italic>x\nCd\n<italic>x\nTe films (\n<italic>x\n = 0.18, 0.20, 0.22) as a function of temperature in a noncontact manner. Using a Drude–Lorentz model fit to the measured complex transmission function combined with a Kane model description of the band structure, we obtain the temperature-dependent conduction band carrier density, effective mass, scattering time, and carrier mobility for all three Hg\n1−\n<italic>x\nCd\n<italic>x\nTe films. The optical properties of a bare substrate of Cd\n0.96\nZn\n0.04\nTe were also measured in the terahertz region. The high quality of the Hg\n1−\n<italic>x\nCd\n<italic>x\nTe films is demonstrated by ultrahigh mobilities exceeding 10\n5\n cm\n2\nV\n−1\ns\n−1\n and ionized donor densities less than 3 × 10\n15\n cm\n−3\n at temperatures below 100 K.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"14 4","pages":"466-475"},"PeriodicalIF":3.9000,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Terahertz Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10508489/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

We use terahertz time-domain spectroscopy to measure the complex dielectric function of long-wave infrared Hg _1- _x Cd _x Te films ( x = 0.18, 0.20, 0.22) as a function of temperature in a noncontact manner. Using a Drude–Lorentz model fit to the measured complex transmission function combined with a Kane model description of the band structure, we obtain the temperature-dependent conduction band carrier density, effective mass, scattering time, and carrier mobility for all three Hg ₁₋ _x Cd _x Te films. The optical properties of a bare substrate of Cd _0.96 Zn _0.04 Te were also measured in the terahertz region. The high quality of the Hg ₁₋ _x Cd _x Te films is demonstrated by ultrahigh mobilities exceeding 10 ⁵ cm ² V ⁻¹ s ⁻¹ and ionized donor densities less than 3 × 10 ¹⁵ cm ⁻³ at temperatures below 100 K.

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用太赫兹时域光谱非接触表征长波红外碲化镉汞薄膜中的载流子迁移率

我们利用太赫兹时域光谱法，以非接触方式测量了长波红外 Hg1-xCdxTe 薄膜（x = 0.18、0.20、0.22）的复介电函数随温度变化的函数关系。利用德鲁德-洛伦兹模型拟合测量到的复合透射函数，结合凯恩模型对带状结构的描述，我们得到了所有三种 Hg1-xCdxTe 薄膜随温度变化的导带载流子密度、有效质量、散射时间和载流子迁移率。我们还在太赫兹区域测量了 Cd0.96Zn0.04Te 裸衬底的光学特性。在低于 100 K 的温度下，Hg1-xCdxTe 薄膜的超高迁移率超过 105 cm2V-1s-1，电离供体密度小于 3 × 1015 cm-3，这证明了 Hg1-xCdxTe 薄膜的高质量。

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来源期刊

IEEE Transactions on Terahertz Science and Technology ENGINEERING, ELECTRICAL & ELECTRONIC-OPTICS

CiteScore

7.10

自引率

9.40%

发文量

102

期刊介绍： IEEE Transactions on Terahertz Science and Technology focuses on original research on Terahertz theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of Terahertz waves.