Fei-fan Li , Hao-yang Li , Zhao-hua Zhou , Lei Zhou , Wan-ling Deng , Miao Xu , Lei Wang , Wei-jing Wu , Jun-biao Peng
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引用次数: 0
Abstract
A unified and complete capacitance model of metal oxide thin-film transistors (MO TFTs) based on three-terminal charges is proposed in this paper. The analytical expression of the three-terminal charges is obtained with the effective charge density approach and the Ward-Dutton charge partitioning approach. By considering the non-reciprocal capacitance between any two terminals, the complete capacitance model of the MO TFTs is proposed with an accurate description. The proposed model has a uniform and analytical capacitance expression over the full working regions with a specific physical meaning based on the surface potential solution. Furthermore, the sufficient capacitance experimental data of the fabricated IZO-TFT are presented to verify the proposed model. It is shown that there is a good agreement between the experimental data and the proposed model in a wide range of working regions.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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