Study on the Oxygen Partial Pressure Dependent Annealing Effect for SiO2/SiC Stack

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2024-06-28 DOI:10.1002/aelm.202400040

Qian Zhang, Nannan You, Jiayi Wang, Yang Xu, Kuo Zhang, Shengkai Wang

{"title":"Study on the Oxygen Partial Pressure Dependent Annealing Effect for SiO2/SiC Stack","authors":"Qian Zhang, Nannan You, Jiayi Wang, Yang Xu, Kuo Zhang, Shengkai Wang","doi":"10.1002/aelm.202400040","DOIUrl":null,"url":null,"abstract":"Post-oxidation annealing in oxygen (O2) ambient can improve the quality of the SiO2/SiC stack without introducing foreign atoms. In order to reveal the annealing mechanism at different oxygen partial pressures (P(O2)), this work focuses on the dependence of the annealing effect on P(O2) in a wide range from 0.01 Pa to 101 kPa for SiO2/SiC stack. In order to minimize the C-related defects generated during SiC oxidation, the SiO2/SiC stacks are formed by oxidizing the deposited Si on the SiC epitaxial layer. The electrical characteristics of the annealed samples show that low P(O2) is beneficial to improve the interface quality, and high P(O2) is beneficial to improve the oxide layer quality. In addition, time of flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy analysis shows that the distribution and filling of oxygen vacancies (V[O]) are consistent with the electrical results. Finally, a model describing V[O] filling amount with P(O2) is proposed to quantitatively characterize the dependence of the annealing effect on P(O2), which shows that the filling amount of V[O] is proportional to P(O2)n (n∼0.065). This model provides theoretical support for improving the quality of SiC MOS by O2 annealing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 10","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400040","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/aelm.202400040","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

Post-oxidation annealing in oxygen (O₂) ambient can improve the quality of the SiO₂/SiC stack without introducing foreign atoms. In order to reveal the annealing mechanism at different oxygen partial pressures (P(O₂)), this work focuses on the dependence of the annealing effect on P(O₂) in a wide range from 0.01 Pa to 101 kPa for SiO₂/SiC stack. In order to minimize the C-related defects generated during SiC oxidation, the SiO₂/SiC stacks are formed by oxidizing the deposited Si on the SiC epitaxial layer. The electrical characteristics of the annealed samples show that low P(O₂) is beneficial to improve the interface quality, and high P(O₂) is beneficial to improve the oxide layer quality. In addition, time of flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy analysis shows that the distribution and filling of oxygen vacancies (V[O]) are consistent with the electrical results. Finally, a model describing V[O] filling amount with P(O₂) is proposed to quantitatively characterize the dependence of the annealing effect on P(O₂), which shows that the filling amount of V[O] is proportional to P(O₂)ⁿ (n∼0.065). This model provides theoretical support for improving the quality of SiC MOS by O₂ annealing.

Abstract Image

查看原文本刊更多论文

二氧化硅/碳化硅叠层的氧分压退火效应研究

在氧气（O2）环境中进行氧化后退火可以在不引入外来原子的情况下提高二氧化硅/碳化硅叠层的质量。为了揭示不同氧分压（P(O2)）下的退火机理，这项工作重点研究了 SiO2/SiC 堆在 0.01 Pa 到 101 kPa 的宽范围内退火效果对 P(O2) 的依赖性。为了尽量减少碳化硅氧化过程中产生的与 C 有关的缺陷，SiO2/SiC 叠层是通过氧化碳化硅外延层上的沉积硅形成的。退火样品的电气特性表明，低 P(O2) 有利于改善界面质量，而高 P(O2) 则有利于改善氧化层质量。此外，飞行时间二次离子质谱和 X 射线光电子能谱分析表明，氧空位（V[O]）的分布和填充与电学结果一致。最后，提出了一个描述 V[O] 填充量与 P(O2) 的模型，以定量表征退火效应对 P(O2) 的依赖性，结果表明 V[O] 的填充量与 P(O2)n 成正比（n∼0.065）。该模型为通过 O2 退火提高 SiC MOS 的质量提供了理论支持。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.