A Study on h-BN Resistive Switching Temporal Response

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2024-06-21 DOI:10.1002/aelm.202400022

Mirembe Musisi-Nkambwe, Sahra Afshari, Jing Xie, Hailey Warner, Ivan Sanchez Esqueda

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Abstract

Previous work that studied hexagonal boron nitride (h-BN) memristor DC resistive-switching characteristics is extended to include an experimental understanding of their dynamic behavior upon programming or synaptic weight update. The focus is on the temporal resistive switching response to driving stimulus (programming voltage pulses) effecting conductance updates during training in neural network crossbar implementations. Test arrays are fabricated at the wafer level, enabled by the transfer of CVD-grown few-layer (8 layer) or multi-layer (18 layer) h-BN films. A comprehensive study of their temporal response under various conditions–voltage pulse amplitude, edge rate (pulse rise/fall times), and temperature–provides new insights into the resistive switching process toward optimized devices and improvements in their implementation of artificial neural networks. The h-BN memristors can achieve multi-state operation through ultrafast pulsed switching (< 25 ns) with high energy efficiency (≈10 pJ pulse⁻¹).

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关于 h-BN 电阻开关时序响应的研究

以前的工作研究了六方氮化硼（h-BN）忆阻器的直流电阻开关特性，现在的工作扩展到通过实验了解它们在编程或突触权重更新时的动态行为。研究的重点是神经网络横杆实施训练期间，对影响电导更新的驱动刺激（编程电压脉冲）的时间电阻开关响应。通过转移 CVD 生长的少层（8 层）或多层（18 层）h-BN 薄膜，在晶圆级制造了测试阵列。在电压脉冲幅度、边沿速率（脉冲上升/下降时间）和温度等各种条件下，对它们的时间响应进行了全面研究，从而对电阻开关过程有了新的认识，从而优化了器件并改进了人工神经网络的实施。h-BN 回忆晶体管可以通过超快脉冲开关（25 ns）实现多态运行，并具有很高的能效（≈10 pJ pulse-1）。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.