Structural Features and Electrical Properties of Si(Al) Thermomigration Channels for High-Voltage Photoelectric Converters

Q4 Engineering

Russian Microelectronics Pub Date : 2024-06-04 DOI:10.1134/s1063739724600109

A. A. Lomov, B. M. Seredin, S. Yu. Martyushov, A. A. Tatarintsev, V. P. Popov, A. V. Malibashev

引用次数: 0

Abstract

The results of a study of the structural features and electrical properties of the end-to-end thermomigration (ThM) of the p-channels of Si(Al) in a silicon wafer are presented. Structural studies are carried out using X-ray methods of projection topography, diffraction reflection curves, and scanning electron microscopy (SEM). It is shown that the channel-matrix interface is coherent without the formation of misfit dislocations. The possibility is shown of using an array of the ThM of the p-channels of 15 elements for the formation of a monolithic photoelectric solar module in a Si(111)-based silicon wafer of p-channels 100 µm wide with walls in the plane \(\left( {1\bar {1}0} \right)\). The monolithic solar module has a conversion efficiency of 13.1%, an open circuit voltage of 8.5 V, and a short circuit current density of 33 mA/cm².

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用于高压光电转换器的硅（铝）热迁移通道的结构特征和电气性能

摘要本文介绍了对硅晶片中硅（铝）p 沟道端对端热迁移（ThM）的结构特征和电气特性的研究结果。结构研究采用了投影拓扑、衍射反射曲线和扫描电子显微镜 (SEM) 等 X 射线方法。结果表明，通道-基质界面是连贯的，不会形成错位。研究表明，可以使用 15 个元素的 p 沟道 ThM 阵列，在基于硅（111）的硅晶片上形成单片光电太阳能模块，p 沟道宽 100 微米，壁在（\left( {1\bar {1}0} \right)）平面内。单片太阳能模块的转换效率为 13.1%，开路电压为 8.5 V，短路电流密度为 33 mA/cm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.