Han Yan, Pingping Zhuang, Bo Li, Tian Ye, Changjie Zhou, Yushan Chen, Tiejun Li, Weiwei Cai, Daquan Yu, Jing Liu, Weiyi Lin
{"title":"Metal Penetration and Grain Boundary in MoS2 Memristors","authors":"Han Yan, Pingping Zhuang, Bo Li, Tian Ye, Changjie Zhou, Yushan Chen, Tiejun Li, Weiwei Cai, Daquan Yu, Jing Liu, Weiyi Lin","doi":"10.1002/aelm.202400264","DOIUrl":null,"url":null,"abstract":"2D semiconductors have demonstrated outstanding switching performance in resistive random-access memory (RRAM). Despite the proposed resistive switching (RS) mechanism involving the penetration of electrode metal atoms, direct observation of metal penetration in these van-der-Waals stacked 2D semiconductors remains absent. This study utilizes 2D molybdenum disulfide (MoS<sub>2</sub>) as the switching material, employing gold and multilayer graphene as electrodes. Through analysis of the switching characteristics of these RRAM devices, the pivotal role of grain boundaries and metal atoms is identify in achieving RS. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy provide direct evidence of metal penetration into multilayer MoS<sub>2</sub>. This study offers valuable insights into the RS mechanism in memristors based on multilayer MoS<sub>2</sub>, providing guidance for designing and optimizing 2D material memristive devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400264","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
2D semiconductors have demonstrated outstanding switching performance in resistive random-access memory (RRAM). Despite the proposed resistive switching (RS) mechanism involving the penetration of electrode metal atoms, direct observation of metal penetration in these van-der-Waals stacked 2D semiconductors remains absent. This study utilizes 2D molybdenum disulfide (MoS2) as the switching material, employing gold and multilayer graphene as electrodes. Through analysis of the switching characteristics of these RRAM devices, the pivotal role of grain boundaries and metal atoms is identify in achieving RS. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy provide direct evidence of metal penetration into multilayer MoS2. This study offers valuable insights into the RS mechanism in memristors based on multilayer MoS2, providing guidance for designing and optimizing 2D material memristive devices.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.