Renhao Song, Junqin Zhang, Zhanqi Zhu, Guangbao Shan, Yintang Yang
{"title":"Fault and self-repair for high reliability in die-to-die interconnection of 2.5D/3D IC","authors":"Renhao Song, Junqin Zhang, Zhanqi Zhu, Guangbao Shan, Yintang Yang","doi":"10.1016/j.microrel.2024.115429","DOIUrl":null,"url":null,"abstract":"<div><p>Bringing dies closer by die-to-die interconnection is a way that reduces latency and energy per bit transmitted, while increasing bandwidth per mm of chip. Heterogeneous integration using 2.5D/3D architectures enables disaggregation of package into various components such as input/output (IO), memory, process, and accelerator. These different functional components may be dies designed and manufactured by different companies, and multiple dies are integrated and interconnected in a package to form a multi-die system. In a multi-die package, these dies are connected using through silicon via (TSV) stacking or re-distribution layer (RDL) and TSV in the interposer according to communication protocols. However, it makes the electrical failure of its interconnection have a greater impact on reliability. Unlike interconnection of traditional integrated circuit (IC), it will bring many new challenges for fault detection and self-repair in 2.5D/3D IC. In this paper, according to unique characteristics of the die-to-die interconnection, we analyze it in top-down approach. The relevant researches on architecture, fabrication, the defect introduced, fault detection, re-routing and functional post-repair are introduced. At the end of this paper, the challenges and solutions in every stage are concluded, and the future perspectives of high reliability in die-to-die interconnection of the 2.5D/3D IC are presented.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"158 ","pages":"Article 115429"},"PeriodicalIF":1.6000,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424001094","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Bringing dies closer by die-to-die interconnection is a way that reduces latency and energy per bit transmitted, while increasing bandwidth per mm of chip. Heterogeneous integration using 2.5D/3D architectures enables disaggregation of package into various components such as input/output (IO), memory, process, and accelerator. These different functional components may be dies designed and manufactured by different companies, and multiple dies are integrated and interconnected in a package to form a multi-die system. In a multi-die package, these dies are connected using through silicon via (TSV) stacking or re-distribution layer (RDL) and TSV in the interposer according to communication protocols. However, it makes the electrical failure of its interconnection have a greater impact on reliability. Unlike interconnection of traditional integrated circuit (IC), it will bring many new challenges for fault detection and self-repair in 2.5D/3D IC. In this paper, according to unique characteristics of the die-to-die interconnection, we analyze it in top-down approach. The relevant researches on architecture, fabrication, the defect introduced, fault detection, re-routing and functional post-repair are introduced. At the end of this paper, the challenges and solutions in every stage are concluded, and the future perspectives of high reliability in die-to-die interconnection of the 2.5D/3D IC are presented.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.