Fault and self-repair for high reliability in die-to-die interconnection of 2.5D/3D IC

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Renhao Song, Junqin Zhang, Zhanqi Zhu, Guangbao Shan, Yintang Yang
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引用次数: 0

Abstract

Bringing dies closer by die-to-die interconnection is a way that reduces latency and energy per bit transmitted, while increasing bandwidth per mm of chip. Heterogeneous integration using 2.5D/3D architectures enables disaggregation of package into various components such as input/output (IO), memory, process, and accelerator. These different functional components may be dies designed and manufactured by different companies, and multiple dies are integrated and interconnected in a package to form a multi-die system. In a multi-die package, these dies are connected using through silicon via (TSV) stacking or re-distribution layer (RDL) and TSV in the interposer according to communication protocols. However, it makes the electrical failure of its interconnection have a greater impact on reliability. Unlike interconnection of traditional integrated circuit (IC), it will bring many new challenges for fault detection and self-repair in 2.5D/3D IC. In this paper, according to unique characteristics of the die-to-die interconnection, we analyze it in top-down approach. The relevant researches on architecture, fabrication, the defect introduced, fault detection, re-routing and functional post-repair are introduced. At the end of this paper, the challenges and solutions in every stage are concluded, and the future perspectives of high reliability in die-to-die interconnection of the 2.5D/3D IC are presented.

通过故障和自我修复实现 2.5D/3D 集成电路芯片间互连的高可靠性
通过芯片与芯片之间的互联拉近芯片之间的距离,可以减少每比特传输的延迟和能耗,同时提高每毫米芯片的带宽。采用 2.5D/3D 架构的异构集成可将封装分解为输入/输出(IO)、内存、工艺和加速器等不同组件。这些不同的功能组件可能是由不同公司设计和制造的芯片,多个芯片集成在一个封装中并相互连接,形成一个多芯片系统。在多芯片封装中,这些芯片根据通信协议通过硅通孔(TSV)堆叠或再分布层(RDL)以及中间件中的 TSV 进行连接。然而,这使得其互连的电气故障对可靠性的影响更大。与传统集成电路(IC)互连不同,它将为 2.5D/3D IC 的故障检测和自我修复带来许多新的挑战。本文根据芯片到芯片互连的特殊性,采用自顶向下的方法对其进行分析。本文介绍了架构、制造、缺陷引入、故障检测、重新路由和功能后修复等方面的相关研究。最后,总结了每个阶段所面临的挑战和解决方案,并展望了 2.5D/3D 集成电路芯片间互连高可靠性的未来前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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