Andrzej Sławek, Lulu Alluhaibi, Ewelina Kowalewska, Gisya Abdi, Tomasz Mazur, Agnieszka Podborska, Krzysztof Mech, Marianna Marciszko-Wiąckowska, Alexey Maximenko, Konrad Szaciłowski
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引用次数: 0
Abstract
In this work, a family of Ni-based dibenzotetraaza[14]annulene (dtaa) complexes are investigated for their application in memristors (memory resistors). A series of four Ni(II) complexes with different peripheral substituents of the dtaa ligand are successfully synthesized. Based on these compounds, two-terminal thin-film devices are fabricated in planar architecture. Four metals with different work functions are tested: Mg, Cu, Ni, and Au. It is demonstrated that ITO|[Ni(Me4dtaa)]|Cu devices show hysteretic behavior and offer stable, robust, and reproducible switching between high- and low-resistive states. An in-depth spectroscopic characterization of the Ni complex is performed, using radiation from infrared, through visible and ultraviolet, to tender X-rays. Operando X-ray fluorescence spectroscopy is used to monitor redox and structural changes upon the polarization of the studied memristor with the external electric field. Density functional theory calculations are used to better understand the electronic structure of the studied material, as well as structural rearrangement after electron injection that may be responsible for the modulation of electric conductivity. Finding a unique case of filamentary-type resistive switching involving redox reactions of stationary molecules within a molecular solid is postulated. Yet, the formation of these filaments is not related to any significant configurational changes at the atomic scale.
本文研究了镍基二苯并四氮杂[14]萘(dtaa)配合物家族在忆阻器(记忆电阻器)中的应用。我们成功合成了四种具有不同外围取代基 dtaa 配体的 Ni(II) 复合物系列。在这些化合物的基础上,制造出了平面结构的两端薄膜器件。测试了四种具有不同功函数的金属:镁、铜、镍和金。实验证明,ITO|[Ni(Me4dtaa)]|Cu 器件显示出滞后行为,并能在高阻态和低阻态之间进行稳定、稳健和可重现的切换。利用从红外线、可见光、紫外线到微弱 X 射线的辐射,对 Ni 复合物进行了深入的光谱表征。操作性 X 射线荧光光谱用于监测所研究的忆阻器在外部电场极化时的氧化还原和结构变化。密度泛函理论计算用于更好地理解所研究材料的电子结构,以及电子注入后可能导致电导率调节的结构重排。研究假设找到了一个独特的丝状电阻开关案例,其中涉及分子固体中静止分子的氧化还原反应。然而,这些丝状物的形成与原子尺度上任何显著的构型变化无关。
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.