Fabrication of pyrolytic carbon interdigitated microelectrodes by maskless UV photolithography with epoxy-based photoresists SU-8 and mr-DWL

IF 2.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Nicolai Støvring , Babak Rezaei , Arto Heiskanen , Jenny Emnéus , Stephan Sylvest Keller
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Abstract

Maskless UV photolithography is increasingly used, especially in research environments where low turn-around time for new designs improves productivity. Here, we fabricate pyrolytic carbon interdigitated microelectrodes with small interelectrode gaps, good adhesion to the carrier substrate, high surface area and excellent electrochemical properties using maskless UV photolithography with two negative epoxy-based photoresists, namely the commonly used SU-8 and the recently developed mr-DWL. The minimum realizable trench width in 15 μm thick photoresist films is 2.4 ± 0.15 μm for mr-DWL 5 and 3.1 ± 0.10 μm for SU-8 2035. After pyrolysis, the two resulting pyrolytic carbon materials show similar electrochemical properties. However, shrinkage during pyrolysis is significantly lower for mr-DWL compared to SU-8, which is beneficial for the fabrication of interdigitated microelectrodes. Furthermore, delamination of the electrodes during processing and operation is prevented due to the introduction of poly silicon adhesion structures. This work provides valuable insights into maskless UV lithography as well as into the pyrolytic carbon process to increase the yield, performance and productivity for fabrication of microelectrodes.

Abstract Image

利用环氧基光刻胶 SU-8 和 mr-DWL,通过无掩模紫外光刻技术制造热解碳插接微电极
无掩模紫外光刻技术的应用越来越广泛,特别是在研究环境中,新设计的周转时间短,提高了生产率。在这里,我们利用无掩模紫外光刻技术和两种环氧树脂基负性光刻胶(即常用的 SU-8 和最近开发的 mr-DWL),制造出电极间隙小、与载体基底粘附性好、表面积大且电化学性能优异的热解碳插接微电极。在 15 μm 厚的光刻胶薄膜中,mr-DWL 5 的最小可实现沟槽宽度为 2.4 ± 0.15 μm,SU-8 2035 为 3.1 ± 0.10 μm。热解后,两种热解碳材料显示出相似的电化学特性。不过,与 SU-8 相比,mr-DWL 在热解过程中的收缩率要低得多,这有利于制造相互咬合的微电极。此外,由于引入了多晶硅粘附结构,电极在加工和操作过程中不会出现分层。这项工作为无掩模紫外光刻以及热解碳工艺提供了宝贵的见解,从而提高了微电极制造的产量、性能和生产率。
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来源期刊
Micro and Nano Engineering
Micro and Nano Engineering Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
67
审稿时长
80 days
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