Design and characterization of a silicon MEMS microvalve for proportional flow control based on electrostatic bending actuators

Marcel Jongmanns, Bert Kaiser, Christine Ruffert, Sergiu Langa
{"title":"Design and characterization of a silicon MEMS microvalve for proportional flow control based on electrostatic bending actuators","authors":"Marcel Jongmanns, Bert Kaiser, Christine Ruffert, Sergiu Langa","doi":"10.1007/s00542-024-05684-1","DOIUrl":null,"url":null,"abstract":"<p>We designed a MEMS microvalve based on the nanoscopic electrostatic drive (NED) technology (Nat Commun 6:10078, 2015). NED actuators, electrostatically controlled bending beams, are implemented in a clamped-clamped configuration. A normally open plunger valve was designed and characterized. The device is manufactured from silicon. Gas flow rates of up to 37 SCCM can be proportionally controlled between 10% and 100%. A 10% leakage is always present at low backpressures (&lt; 10 kPa) and increases to roughly 20% at 75 kPa backpressure. The structure has been tested up to backpressures of 300 kPa without damage to the structures, but the leakage increases to over 95%. Our unprecedented microvalve concept shows that it is possible to manufacture all-silicon MEMS microvalves with proportional control of the flow rate. The presented work is a proof of concept to test the capabilities of the NED technology for the use in microvalves. There are plans to decrease the leakage in future designs by introducing an additional sealing layer as well as manufacturing a shutter instead of a plunger design.</p>","PeriodicalId":18544,"journal":{"name":"Microsystem Technologies","volume":"49 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microsystem Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1007/s00542-024-05684-1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

We designed a MEMS microvalve based on the nanoscopic electrostatic drive (NED) technology (Nat Commun 6:10078, 2015). NED actuators, electrostatically controlled bending beams, are implemented in a clamped-clamped configuration. A normally open plunger valve was designed and characterized. The device is manufactured from silicon. Gas flow rates of up to 37 SCCM can be proportionally controlled between 10% and 100%. A 10% leakage is always present at low backpressures (< 10 kPa) and increases to roughly 20% at 75 kPa backpressure. The structure has been tested up to backpressures of 300 kPa without damage to the structures, but the leakage increases to over 95%. Our unprecedented microvalve concept shows that it is possible to manufacture all-silicon MEMS microvalves with proportional control of the flow rate. The presented work is a proof of concept to test the capabilities of the NED technology for the use in microvalves. There are plans to decrease the leakage in future designs by introducing an additional sealing layer as well as manufacturing a shutter instead of a plunger design.

Abstract Image

基于静电弯曲致动器的比例流量控制硅 MEMS 微阀的设计与特性分析
我们设计了一种基于纳米静电驱动(NED)技术的 MEMS 微阀(Nat Commun 6:10078, 2015)。NED 驱动器是静电控制的弯曲梁,采用夹紧-夹紧配置。设计并表征了一个常开柱塞阀。该装置由硅制成。气体流量最高可达 37 SCCM,可按比例控制在 10% 到 100% 之间。在低背压(10 kPa)时,始终存在 10% 的泄漏,而在 75 kPa 背压时,泄漏增加到大约 20%。该结构已经过测试,背压达到 300 千帕时,结构没有损坏,但泄漏率增加到 95% 以上。我们前所未有的微阀概念表明,制造具有流量比例控制功能的全硅 MEMS 微阀是可能的。所介绍的工作是对 NED 技术在微阀中应用能力的概念验证。计划在未来的设计中通过引入额外的密封层以及制造快门而不是柱塞设计来减少泄漏。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信