An Online Monitoring Method for Bond Wire Fatigue in IGBT Module

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-10 DOI:10.1109/JEDS.2024.3399554

Hongtao Liu;Fei Wang;Xiaokang Zhang;Weiyi Xia;Lintao Ren

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引用次数: 0

Abstract

IGBT modules are core components of power electronic converters, and their reliability has gained significant attention. Among various reliability concerns, bond wire fatigue is a prominent issue. Bond wire fatigue can alter the electrical characteristics of IGBT modules, affecting the turn-off process of the IGBT. Consequently, it leads to changes in the collector-emitter voltage spike and the auxiliary emitter-emitter voltage spike during the turn-off process. The paper proposes the utilization of the K factor parameter which is not affected by the collector current and junction temperature, based on the collector-emitter voltage spike and the auxiliary emitter-emitter voltage spike, for bond wire fatigue monitoring of IGBT modules. Additionally, the monitoring of bond wire fatigue and junction temperature of IGBT modules was achieved based on the K factor parameter and the auxiliary emitter-emitter voltage spike. This provides a basis for the reliability assessment of IGBT modules.

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IGBT 模块中键合线疲劳的在线监测方法

IGBT 模块是电力电子转换器的核心部件，其可靠性已受到广泛关注。在各种可靠性问题中，键合线疲劳是一个突出问题。键合线疲劳会改变 IGBT 模块的电气特性，影响 IGBT 的关断过程。因此，它会导致关断过程中集电极-发射极电压尖峰和辅助发射极-发射极电压尖峰发生变化。本文根据集电极-发射极电压尖峰和辅助发射极-发射极电压尖峰，提出利用不受集电极电流和结温影响的 K 因子参数来监测 IGBT 模块的键合导线疲劳。此外，基于 K 因子参数和辅助发射极-发射极电压尖峰，实现了对 IGBT 模块键合线疲劳和结温的监测。这为 IGBT 模块的可靠性评估提供了依据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.