Stable and repeatable ZrO2 RRAM achieved by NiO barrier layer for negative set phenomenon elimination

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-05-03 DOI:10.1016/j.sse.2024.108948

Tangyou Sun , Fantao Yu , Chengcheng Li , Taohua Ning , Xingpeng Liu , Zhimou Xu , Zhiqiang Yu , Chunsheng Jiang , Haiou Li , Fabi Zhang , Qing Liao

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引用次数: 0

Abstract

Resistive random-access memory (RRAM) is a promising non-volatile memory technology due to its fast operation, low power consumption, and high reliability. However, the negative set phenomenon remains a challenge for RRAM, which can lead to the deterioration of device switching parameters. In this study, we successfully addressed this issue by inserting a NiO blocking layer between the ZrO₂ and Ag top electrodes in ZrO₂-based RRAM. In addition, the resistive switching characteristics of the device are significantly enhanced by the incorporation of a p-type oxide NiO layer. Compared to single-layer ZrO₂ devices, the double-layer Ag/NiO/ZrO₂/ITO RRAM exhibits improved cycling durability (>500 cycles) and good retention time (3 × 10⁴s). Our analysis of the device conduction mechanism and proposed resistive switching model suggest that oxygen vacancies play a connecting role in the reset process, leading to failed reset behavior. Through the incorporation of a p-type semiconductor NiO layer into ZrO₂-based RRAMs, the interference of oxygen vacancies on the reset process can be effectively impeded. This approach not only provides an effective resolution to the unforeseen negative set phenomenon in RRAM devices, but it also holds paramount significance for the advancement of high-performance RRAMs.

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通过氮氧化物阻挡层消除负集现象，实现稳定且可重复的 ZrO2 RRAM

电阻式随机存取存储器（RRAM）运行速度快、功耗低、可靠性高，是一种前景广阔的非易失性存储器技术。然而，负集现象仍然是 RRAM 面临的一个挑战，它会导致器件开关参数的恶化。在这项研究中，我们在基于 ZrO2 的 RRAM 中的 ZrO2 和 Ag 顶电极之间插入了一层 NiO 阻挡层，从而成功地解决了这一问题。此外，通过加入 p 型氧化物 NiO 层，该器件的电阻开关特性得到了显著增强。与单层 ZrO2 器件相比，双层 Ag/NiO/ZrO2/ITO RRAM 的循环耐久性（500 次）和保持时间（3 × 104s）都有所提高。我们对器件传导机制的分析和提出的电阻开关模型表明，氧空位在复位过程中起连接作用，导致复位行为失败。通过在基于 ZrO2 的 RRAM 中加入 p 型半导体 NiO 层，可以有效抑制氧空位对复位过程的干扰。这种方法不仅有效解决了 RRAM 器件中不可预见的负集现象，而且对高性能 RRAM 的发展具有重要意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.