Structuring of the Surface of Thin Carbon Films during Activation by Microsecond Current Pulses

Q4 Engineering

Russian Microelectronics Pub Date : 2024-05-04 DOI:10.1134/s1063739723600231

D. V. Nefedov, N. O. Shabunin, D. N. Bratashov

引用次数: 0

Abstract

The influence of current activation by the breakdown of the electric pulse on changes in the surface morphology and emission characteristics of a field emission (FE) cathode made based on carbon films obtained by deposition in a microwave gas discharge plasma is studied. The current activation of these films is carried out by applying microsecond voltage pulses until an electrical breakdown occurred. It is shown that during the activation, the morphology of the film surface in the breakdown region changes with the formation of a microsized emitting structure, which significantly improves the FE characteristics of the cathodes based on carbon films.

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微秒电流脉冲活化过程中碳薄膜表面的结构变化

摘要研究了电脉冲击穿电流活化对基于在微波气体放电等离子体中沉积获得的碳薄膜制成的场发射（FE）阴极的表面形态和发射特性变化的影响。这些薄膜的电流活化是通过施加微秒级电压脉冲进行的，直到发生电击穿。结果表明，在活化过程中，击穿区域的薄膜表面形态发生了变化，形成了微小的发射结构，从而显著改善了基于碳薄膜的阴极的 FE 特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.