Some Properties of Argon as an Actinometric Atom. II. Metastable Levels Quenching

Q4 Engineering

Russian Microelectronics Pub Date : 2024-03-21 DOI:10.1134/s1063739723600358

V. P. Kudrya

引用次数: 0

Abstract

Argon metastable levels quenching rate constant data are collected and analyzed from about 30 experimental studies. The main attention is paid to molecules that are used in plasma-chemical processes in microelectronics. All data are presented in detailed tables. They correspond to room temperature. The results obtained can be useful in developing models of the actinometric method for diagnosing low-temperature low-pressure plasma, as well as models of low-pressure discharges in argon-containing mixtures.

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氩作为动量原子的一些特性。II.可迁移级淬火

摘要从大约 30 项实验研究中收集并分析了氩气阶跃淬火速率常数数据。主要关注微电子学等离子体化学过程中使用的分子。所有数据都以详细表格的形式列出。它们与室温相对应。所获得的结果有助于开发用于诊断低温低压等离子体的动量法模型，以及含氩混合物中的低压放电模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.