Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-06 DOI:10.1109/JEDS.2024.3397014

Tae Yoon Lee;Yoon-Jeong Kim;Seokhoon Ahn;Dae-Young Jeon

引用次数: 0

Abstract

Gate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in detail. The results of modeling equations that considered the ideality factor, series resistance, and effective barrier-height according to the gate bias (Vg) were in good agreement with the experimental results. In addition, the dominant conduction mechanism when the effective barrier-height was controlled by Vg is discussed from the perspective of the temperature-dependent currents in Schottky barrier diodes. This work provides critical information that aids our understanding of gated Schottky diodes with graphene/pentacene junctions, increasing the possible practical applications thereof.

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栅极可控石墨烯/五碳烯肖特基结的电可调理想因子和串联电阻

栅极可调肖特基势垒二极管在逻辑晶体管、光电二极管和传感器中应用广泛。在这项研究中，我们详细研究了具有石墨烯/五苯结和附加栅极的肖特基势垒二极管的电气特性。根据栅极偏压（Vg）考虑表意系数、串联电阻和有效势垒高的建模方程的结果与实验结果非常吻合。此外，还从肖特基势垒二极管电流随温度变化的角度讨论了有效势垒高度受 Vg 控制时的主要传导机制。这项研究提供了重要信息，有助于我们理解具有石墨烯/五碳烯结点的栅极肖特基二极管，从而提高其实际应用的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.