Semi-Empirical DFT Based Investigation of Electronic and Quantum Transport Properties of Novel GS-AGNR (N) FET

IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Anshul;Rishu Chaujar
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引用次数: 0

Abstract

In this article, the electronic and quantum transport properties for the bulk configuration of armchair graphene nanoribbons (AGNRs) with varied number of carbon atoms along AGNR width (N) are investigated. The semi-empirical (SE) Density Functional Theory (DFT) approach is used to calculate the band structure, density of states (DOS), and transmission spectrum for the bulk configuration of AGNR. Further, the AGNRs are used in channel material to analyze the performance of field-effect transistors with Gate Stack (GS) architecture. The result shows that the bandgap value is higher for AGNR (N = 4) with a value of 1.98 eV compared to another bulk configuration of AGNRs. In addition to this, AGNR (N = 4) also shows an improved transmission spectrum. Moreover, the transmission spectrum at varied input voltages and projected local density of states (PLDOS) are also analyzed to study the performance of the proposed devices. The parameters mentioned above give a unique idea for evaluating the performance in terms of resonance peaks and electronic structure for device configurations. The off current (I off ) is remarkably reduced, and the switching ratio (I on /I off ) is significantly improved in GS-AGNR (N = 4) FET compared with other device configurations. Owing to the enhanced switching, this paper highlights GS-AGNR (N = 4) FET as a suitable candidate for low-power applications such as low-power sensors, wireless communication, and medical devices.
基于半经验 DFT 的新型 GS-AGNR (N) FET 电子和量子输运特性研究
本文研究了沿 AGNR 宽度(N)不同碳原子数的扶手石墨烯纳米带(AGNR)体构的电子和量子传输特性。采用半经验(SE)密度泛函理论(DFT)方法计算了 AGNR 块体构型的带状结构、状态密度(DOS)和透射谱。此外,在沟道材料中使用 AGNR 分析了采用栅极堆栈(GS)结构的场效应晶体管的性能。结果表明,与另一种块状结构的 AGNR 相比,AGNR(N = 4)的带隙值更高,达到 1.98 eV。除此之外,AGNR(N = 4)还显示出更好的传输频谱。此外,还分析了不同输入电压下的传输谱和投影局部状态密度(PLDOS),以研究拟议器件的性能。上述参数为评估器件配置在共振峰和电子结构方面的性能提供了独特的思路。与其他器件配置相比,GS-AGNR(N = 4)场效应晶体管的关断电流(Ioff)明显降低,开关比(Ion/Ioff)显著提高。由于开关性能增强,本文强调 GS-AGNR (N = 4) FET 是低功耗传感器、无线通信和医疗设备等低功耗应用的合适候选器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.30%
发文量
74
审稿时长
8.3 months
期刊介绍: The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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