Extraction of Charge Trapping Kinetics of Defects From Single-Defect Measurements

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-03-01 DOI:10.1109/TDMR.2024.3395907

Michael Waltl;Bernhard Stampfer;Tibor Grasser

引用次数: 0

Abstract

Charge trapping at oxide defects poses a serious reliability concern in MOS transistors. For scaled technology nodes, the impact of charge-trapping events on the device behavior becomes even more severe. These events can be seen as discrete steps in the device current, allowing for single-defect analysis. In this context, random telegraph noise (RTN) analysis and time-dependent defect spectroscopy (TDDS) have become very popular in exploring the physical origin of charge trapping at single defects. To improve the accuracy of single-defect analysis, we conduct a Monte Carlo analysis of trap occupancy, enabling us to extract information about the charge emission time of fixed oxide traps from charge capture time data recorded under different stress conditions. The newly gained knowledge is beneficial for accurately calibrating defect models used to explain the charge-trapping dynamics of defects.

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从单缺陷测量中提取缺陷的电荷捕获动力学

氧化物缺陷处的电荷捕获是 MOS 晶体管可靠性的一个严重问题。对于按比例放大的技术节点，电荷捕获事件对器件行为的影响变得更加严重。这些事件可视为器件电流中的离散阶跃，从而可进行单缺陷分析。在这种情况下，随机电报噪声（RTN）分析和随时间变化的缺陷光谱（TDDS）在探索单个缺陷电荷捕获的物理起源方面变得非常流行。为了提高单缺陷分析的准确性，我们对陷阱占用率进行了蒙特卡洛分析，使我们能够从不同应力条件下记录的电荷捕获时间数据中提取有关固定氧化物陷阱电荷发射时间的信息。新获得的知识有利于准确校准用于解释缺陷电荷捕获动态的缺陷模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.