Analysis of anomalous C-V behavior for extracting the traps density in the undoped polysilicon with a double-BOX structure

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-04-26 DOI:10.1016/j.sse.2024.108946

Yang Huang , Yiyi Yan , Massinissa Nabet , Fanyu Liu , Bo Li , Binhong Li , Zhengsheng Han , Sorin Cristoloveanu , Jean-Pierre Raskin

引用次数: 0

Abstract

A new Double-BOX structure is introduced to reveal the electrical properties of undoped polysilicon used to enhance the performance of radio frequency SOI substrates. A plateau is clearly observed in the capacitance–voltage (C-V) characteristics, which is due to the influence of the potential barrier formed at the grain boundary. A tangential approximation method based on a three-element circuit model is proposed for correcting the measured C-V curve. With the corrected C-V curve, the effective trap density distribution in polysilicon is determined for each frequency.

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分析反常 C-V 行为以提取双 BOX 结构未掺杂多晶硅中的陷阱密度

为了揭示用于提高射频 SOI 基底面性能的未掺杂多晶硅的电气特性，我们引入了一种新的双 BOX 结构。在电容-电压（C-V）特性中可以清楚地观察到高原现象，这是由于在晶界处形成的势垒的影响。我们提出了一种基于三元素电路模型的切向近似方法，用于修正测量到的 C-V 曲线。利用修正后的 C-V 曲线，可以确定多晶硅中每个频率的有效陷阱密度分布。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.