Blue Laser Diode Annealed Top-Gate Low Temperature Poly-Si TFTs With Low Resistance of Source/Drain From Deposited n+ Layer

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-04-22 DOI:10.1109/JEDS.2024.3392183

Hongyuan Xu;Guangmiao Wan;Xu Wang;Xiaoliang Zhou;Jing Liu;Jinming Li;Lei Lu;Shengdong Zhang

引用次数: 0

Abstract

In this letter, a high performance and large area feasible top-gate low-temperature polysilicon thin film transistor (LTPS TFT) technology is reported. The poly-Si active layer was formed by crystallizing the plasma enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si) film using the blue laser diode anneal (BLDA) technique. The low resistance of source-drain (S/D) regions were formed from a heavily-doped PECVD a-Si layer. The fabricated top-gate LTPS TFTs exhibit excellent electrical performances, with the carrier mobility more than 556.66 cm2/V-s and on/off-current ratio over

$1.58\times 10^{7}$

. This proposed technology is expected to promote the manufacturing lines to the higher generations.

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经蓝色激光二极管退火的顶栅低温多晶硅 TFT，其源极/漏极的低电阻来自沉积的 n + 层

本文报道了一种高性能、大面积可行的顶栅低温多晶硅薄膜晶体管（LTPS TFT）技术。采用蓝色激光二极管退火（BLDA）技术将等离子体增强化学气相沉积（PECVD）非晶硅（a-Si）薄膜结晶，形成多晶硅活性层。高掺PECVD a- si层形成了低阻源漏区（S/D）。所制备的顶栅LTPS tft具有优异的电学性能，载流子迁移率超过556.66 cm2/V-s，通断电流比超过1.58\ × 10^{7}$。该技术有望将生产线提升到更高的一代。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.