Cryogenic Small Dimension Effects and Design-Oriented Scalable Compact Modeling of a 65-nm CMOS Technology

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-04-26 DOI:10.1109/JEDS.2024.3394167

Alberto Gatti;Filip Tavernier

引用次数: 0

Abstract

This paper presents the cryogenic characterization and compact modeling of thin-oxide MOSFETs in a standard 65-nm Si-bulk CMOS technology. The influence of both short and narrow channel effects at extremely low temperature on key device parameters such as threshold voltage and ON current is highlighted, and the performance of this technology node for cryogenic analog circuit design is discussed. It is then demonstrated, for the widest range of gate geometries in literature, that the BSIM4 parameter editing approach can be successfully used to model small dimension effects at cryogenic temperature. In the absence of cryogenic foundry models, the robustness and simplicity of this modeling technique make it a preferred method to quickly build a design-oriented, fully scalable SPICE compact model. This restores complete freedom in device sizing for cryogenic analog circuit design.

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65 纳米 CMOS 技术的低温小尺寸效应和面向设计的可扩展紧凑型建模

本文介绍了采用标准 65 纳米 Si-bulk CMOS 技术的薄氧化物 MOSFET 的低温特性分析和紧凑建模。重点介绍了在极低温度下短沟道和窄沟道效应对阈值电压和导通电流等关键器件参数的影响，并讨论了该技术节点在低温模拟电路设计中的性能。然后，针对文献中最广泛的栅极几何形状，演示了 BSIM4 参数编辑方法可成功用于低温下的小尺寸效应建模。在缺乏低温代工模型的情况下，这种建模技术的稳健性和简易性使其成为快速建立面向设计、完全可扩展的 SPICE 紧凑型模型的首选方法。这为低温模拟电路设计恢复了器件尺寸的完全自由度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.