Controlled lattice deformation for high-mobility two-dimensional MoTe2 growth

Abstract

Two-dimensional (2D) MoTe₂ shows great potential for future semiconductor devices, but the lab-to-fab transition is still in its preliminary stage due to the constraints in the crystal growth level. Currently, the chemical vapor deposition growth of 2D MoTe₂ primarily relies on the tellurization process of Mo-source precursor (MSP). However, the target product 2H-MoTe₂ from Mo precursor suffers from long growth time and suboptimal crystal quality, and MoO_x precursor confronts the dilemma of unclear growth mechanism and inconsistent growth products. Here, we developed magnetron-sputtered MoO₃ film for fast and high-mobility 2H-MoTe₂ growth. The solid-to-solid phase transition growth mechanism of 2D MoTe₂ from Mo and MoO_x precursor was first experimentally unified, and the effect mechanism of MSPs on 2D MoTe₂ growth was systematically elucidated. Compared with Mo and MoO₂, the MoO₃ precursor has the least Mo-unit lattice deformation and exhibits the optimal crystal quality of growth products. Meanwhile, the lowest Gibbs free energy change of the chemical reaction results in an impressive 2H-MoTe₂ growth rate of 8.07 μm/min. The constructed 2H-MoTe₂ field-effect transistor array from MoO₃ precursor showcases record-high hole mobility of 85 cm²·V^-1·s^-1, competitive on-off ratio of 3×10⁴, and outstanding uniformity. This scalable method not only offers efficiency but also aligns with industry standards, making it a promising guideline for diverse 2D material preparation towards real-world applications.