Forward leakage currents in GaN p-i-n diodes

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-04-22 DOI:10.1016/j.sse.2024.108936

Ao Lu , Xiaofei Pan , Xinjie Zhou , Yang Li , Xiao Wang , Jinping Ao , Dawei Yan

引用次数: 0

Abstract

Excessive forward leakage currents in GaN p-i-n diodes were investigated. Traditional diffusion mechanism dominates at V_F > 2 V. The effective band gap is derived to be ∼2.21 eV, which is much lower than 3.4 eV and attributed to a band fluctuation caused by dislocations; At 1.35 V < V_F < 2 V, a trap-assisted tunneling process becomes important, whose ideality factor is still larger than 4.1 at T = 400 K; Two distinct power-law relationships were observed at lower biases, separated at V_F = 0.8 V, whose exponents are extracted to be ∼8 and ∼4, respectively. The behavior is in a good agreement with the space-charge-limited model, featuring an exponentially decaying distribution of trap states below the conduction band.

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GaN pi-n 二极管的正向漏电流

研究了 GaN pi-n 二极管中过大的正向漏电流。传统的扩散机制在 VF > 2 V 时占主导地位。在 1.35 V < VF < 2 V 时，阱辅助隧穿过程变得重要，其表意系数仍大于 4。在 T = 400 K 时，阱辅助隧道过程变得非常重要，其意念系数仍然大于 4；在 VF = 0.8 V 时，在较低偏压下观察到两个不同的幂律关系，其指数分别为 ∼8 和 ∼4。这种行为与空间电荷限制模型十分吻合，其特点是导带以下的阱态分布呈指数衰减。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.