Application of 2D Walsh-Hadamard transform in SRAM upset bitmaps processing

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2024-04-20 DOI:10.1016/j.microrel.2024.115398

A.S. Pilipenko , L.S. Zubkov , M.I. Tikhonov

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引用次数: 0

Abstract

Upset bitmaps distribution features in SRAM arrays exposed by various types of pulsed ionizing radiation (X-rays, n-γ, laser-accelerated protons) were analyzed by experimental data processing with 2D Walsh-Hadamard transform, i.e. expansion of orthogonal rectangle functions on closed set basis. Using such processing with comparison to expansion on 1D Fourier or Walsh-Hadamard transform allows one to detect additional regularities in upset distribution. The presence of these regularities can be explained by voltage dropdown across integrated circuit voltage supply buses arising under pulsed radiation exposure as a result of dose rate effects. The “stripe-like” upset bitmap is explicitly observed under the pulsed X-ray exposure. In the case of pulsed complex n-γ (fission neutrons) and laser-accelerated protons exposure the dose rate effects significance and therefore the presence of any regularities in upset bitmaps are strongly device-specific. A quantitative criterion was introduced on basis of 2D Walsh-Hadamard amplitude spectra's statistical examination permitting to pick out upset bitmaps with regularities even for visually uniform upset bitmaps.

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二维沃尔什-哈达玛德变换在 SRAM 破坏位图处理中的应用

通过使用二维沃尔什-哈达玛变换（即在封闭集基础上展开正交矩形函数）进行实验数据处理，分析了 SRAM 阵列在各种类型的脉冲电离辐射（X 射线、n-γ、激光加速质子）照射下的颠簸位图分布特征。与一维傅里叶或沃尔什-哈达玛变换的扩展相比，使用这种处理方法可以发现扰动分布中的额外规律性。出现这些规律性的原因是，在脉冲辐射照射下，由于剂量率效应，集成电路电压供应总线上的电压下降。在脉冲 X 射线照射下，可以清晰地观察到 "条纹状 "扰动位图。在脉冲复合 n-γ（裂变中子）和激光加速质子照射的情况下，剂量率效应的重要性以及扰动位图中任何规律性的存在都具有很强的设备特异性。在二维沃尔什-哈达玛振幅谱统计检查的基础上，引入了一个定量标准，该标准允许挑选出具有规律性的扰动位图，即使是视觉上均匀的扰动位图。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.