Statistical Device Simulation and Machine Learning of Process Variation Effects of Vertically Stacked Gate-All-Around Si Nanosheet CFETs

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2024-04-18 DOI:10.1109/TNANO.2024.3390793

Sekhar Reddy Kola;Yiming Li;Rajat Butola

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Abstract

In this study, we report the process variation effect (PVE) including the work function fluctuation (WKF) on the DC/AC characteristic fluctuation of stacked gate-all-around silicon complementary field-effect transistors (CFETs). The PVE affects characteristic fluctuation significantly; in particular, for the variability of off-state current. Owing to the bottom channel of a fin-type, the P-FET suffers from the worst off-state current fluctuation (more than 200% variation) compared to the N-FET. The device variability induced by the WKF is marginal because of amorphous-type metal grains. As input features to an artificial neural network (ANN) model, low and high work function values, as well as parameters of PVE that have prevalent effects on CEFT transfer characteristics are further considered and modeled. The estimated values of R ² -score prove that the ANN model properly grasps information from the dataset successfully; thus, it can be used to model emerging CFETs for circuit simulation.

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垂直堆叠全栅极硅纳米片 CFET 工艺变异效应的统计器件模拟和机器学习

在这项研究中，我们报告了工艺变化效应（PVE），包括功函数波动（WKF）对堆叠式全栅极硅互补场效应晶体管（CFET）的直流/交流特性波动的影响。PVE 对特性波动的影响很大，尤其是关态电流的变化。与 N 型场效应晶体管相比，P 型场效应晶体管由于采用了鳍式底部沟道，因此关态电流波动最严重（变化超过 200%）。由于非晶态金属晶粒的存在，WKF 引起的器件变化很小。作为人工神经网络 (ANN) 模型的输入特征，低功函数值和高功函数值以及对 CEFT 传输特性有普遍影响的 PVE 参数被进一步考虑和建模。R2 分数的估计值证明，人工神经网络模型成功地正确掌握了数据集的信息；因此，它可用于新兴 CFET 的电路仿真建模。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.