Shuang Cao, Qingkui Yu, Qianyuan Wang, He Wang, Yi Sun, He Lv, Bo Mei, Rigen Mo, Pengwei Li, Hongwei Zhang
{"title":"Failure analysis of heavy ion-irradiated silicon carbide junction barrier Schottky diodes","authors":"Shuang Cao, Qingkui Yu, Qianyuan Wang, He Wang, Yi Sun, He Lv, Bo Mei, Rigen Mo, Pengwei Li, Hongwei Zhang","doi":"10.1016/j.microrel.2024.115401","DOIUrl":null,"url":null,"abstract":"<div><p>An analysis of damage, including single event burnout (SEB) and single event leakage current (SELC) caused by heavy ion irradiation in silicon carbide (SiC) junction barrier Schottky diodes (JBSDs), was performed using Auger electron spectroscopy (AES), emission microscope (EMMI), focused ion beam (FIB), transmission electron microscopy (TEM) and other methods. The damage of SEB extending from the Schottky contact through the epitaxial layer to the SiC substrate was observed. The damage causing SELC was related to the micro-burnout of the Schottky contact. It was concluded that the damage of Schottky contact was induced by incident high-energy particles under a large electric field, forming a leakage current path, resulting in SEB and SELC in the SiC device.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2024-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424000817","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
An analysis of damage, including single event burnout (SEB) and single event leakage current (SELC) caused by heavy ion irradiation in silicon carbide (SiC) junction barrier Schottky diodes (JBSDs), was performed using Auger electron spectroscopy (AES), emission microscope (EMMI), focused ion beam (FIB), transmission electron microscopy (TEM) and other methods. The damage of SEB extending from the Schottky contact through the epitaxial layer to the SiC substrate was observed. The damage causing SELC was related to the micro-burnout of the Schottky contact. It was concluded that the damage of Schottky contact was induced by incident high-energy particles under a large electric field, forming a leakage current path, resulting in SEB and SELC in the SiC device.
期刊介绍：
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
