Impact of Gate Oxide Thickness on Flicker Noise (1/f) in PDSOI n-channel FETs

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-04-16 DOI:10.1016/j.sse.2024.108935

Shruti Pathak , Sumreti Gupta , Aarti Rathi , P. Srinivasan , Abhisek Dixit

引用次数: 0

Abstract

This work reports the impact of gate oxide thickness on flicker noise (1/f) in 45-nm RFSOI NFET devices. In addition, the effect of finger width scaling on 1/f noise parameters is studied in linear region. The dominant source of 1/f noise is also analyzed. It is observed that thin oxide devices show carrier number fluctuation; however, for thick oxide devices, correlated number-mobility govern the noise. Extracted trap densities using 1/f noise show higher volume trap densities in thin oxide devices. Moreover, trap distribution behavior is analyzed using frequency exponent. Further, GLOBALFOUNDRIES PDK is utilized to model 1/f noise behavior of the devices.

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栅极氧化物厚度对 PDSOI n 沟道场效应晶体管闪烁噪声 (1/f) 的影响

这项研究报告了栅极氧化物厚度对 45 纳米 RFSOI NFET 器件闪烁噪声 (1/f) 的影响。此外，还研究了线性区域中指宽缩放对 1/f 噪声参数的影响。还分析了 1/f 噪声的主要来源。研究发现，薄氧化物器件会出现载流子数量波动；但对于厚氧化物器件，相关的数量-流动性会控制噪声。利用 1/f 噪声提取的陷阱密度显示，薄氧化物器件的体积陷阱密度更高。此外，还利用频率指数分析了陷阱分布行为。此外，还利用 GLOBALFOUNDRIES PDK 对器件的 1/f 噪声行为进行了建模。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.