Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm2

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-04-10 DOI:10.1109/JEDS.2024.3386857

Jialun Li;Renqiang Zhu;Ka Ming Wong;Kei May Lau

引用次数: 0

Abstract

This letter reports a high-performance fully-vertical GaN-on-SiC p-i-n diode enabled by a conductive n-AlGaN buffer. The buffer conductivity was optimized by tuning the Al composition. The diode presents an ultra-low specific ON-resistance of 0.25

$\text{m}\Omega \cdot $

cm2, a high current swing of 1011, and a high breakdown voltage of 850 V with a 5-

$\mu \text{m}$

-thick drift layer, leading to a Baliga’s figure of merit (BFOM) of 2.89 GW/cm2. The diode performance at elevated temperatures and the OFF-state leakage mechanism are analyzed. The demonstrated fully-vertical GaN-on-SiC p-i-n diode with a conductive buffer reveals a simple way towards realizing high-performance fully-vertical GaN-on-SiC devices for high power applications.

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BFOM 为 2.89 GW/cm2 的全垂直硅基氮化镓 pi-n 二极管

这封信报告了通过导电 nAlGaN 缓冲区实现的高性能全垂直硅基氮化镓 pi-n 二极管。通过调整铝的成分优化了缓冲器的电导率。该二极管具有 0.25 $\text{m}\Omega \cdot $ cm2 的超低比导通电阻、1011 的高电流摆幅和 850 V 的高击穿电压，漂移层厚度为 5- $\mu \text{m}$，巴利加优点系数 (BFOM) 为 2.89 GW/cm2。对二极管在高温下的性能和关态漏电机制进行了分析。所展示的带有导电缓冲器的全垂直硅基氮化镓 pi-n 二极管揭示了一种实现高性能全垂直硅基氮化镓器件的简单方法，适用于高功率应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.