Deformation and crack growth in multilayered ceramic capacitor during thermal reflow process: numerical and experimental investigation

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Rilwan Kayode Apalowo, Mohamad Aizat Abas, Zuraihana Bachok, Mohamad Fikri Mohd Sharif, Fakhrozi Che Ani, Mohamad Riduwan Ramli, Muhamed Abdul Fatah bin Muhamed Mukhtar
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引用次数: 0

Abstract

Purpose

This study aims to investigate the possible defects and their root causes in a soft-termination multilayered ceramic capacitor (MLCC) when subjected to a thermal reflow process.

Design/methodology/approach

Specimens of the capacitor assembly were subjected to JEDEC level 1 preconditioning (85 °C/85%RH/168 h) with 5× reflow at 270°C peak temperature. Then, they were inspected using a 2 µm scanning electron microscope to investigate the evidence of defects. The reliability test was also numerically simulated and analyzed using the extended finite element method implemented in ABAQUS.

Findings

Excellent agreements were observed between the SEM inspections and the simulation results. The findings showed evidence of discontinuities along the Cu and the Cu-epoxy layers and interfacial delamination crack at the Cu/Cu-epoxy interface. The possible root causes are thermal mismatch between the Cu and Cu-epoxy layers, moisture contamination and weak Cu/Cu-epoxy interface. The maximum crack length observed in the experimentally reflowed capacitor was measured as 75 µm, a 2.59% difference compared to the numerical prediction of 77.2 µm.

Practical implications

This work's contribution is expected to reduce the additional manufacturing cost and lead time in investigating reliability issues in MLCCs.

Originality/value

Despite the significant number of works on the reliability assessment of surface mount capacitors, work on crack growth in soft-termination MLCC is limited. Also, the combined experimental and numerical investigation of reflow-induced reliability issues in soft-termination MLCC is limited. These cited gaps are the novelties of this study.

多层陶瓷电容器在热回流过程中的变形和裂纹生长:数值和实验研究
设计/方法/步骤对电容器组件试样进行 JEDEC 1 级预处理(85 °C/85%RH/168 h),并在 270°C 峰值温度下进行 5 倍回流。然后,使用 2 µm 扫描电子显微镜对其进行检查,以找出缺陷的证据。此外,还使用 ABAQUS 中的扩展有限元法对可靠性测试进行了数值模拟和分析。研究结果表明,铜层和铜-环氧层存在不连续性,铜/铜-环氧界面存在界面分层裂纹。可能的根本原因是铜层和铜-环氧层之间的热不匹配、湿气污染以及铜/铜-环氧界面薄弱。在实验回流电容器中观察到的最大裂纹长度为 75 µm,与数值预测的 77.2 µm 相比,相差 2.59%。 原创性/价值尽管有大量关于表面贴装电容器可靠性评估的研究,但关于软端接 MLCC 中裂纹生长的研究还很有限。此外,针对软端接 MLCC 中回流引起的可靠性问题进行的实验和数值综合研究也很有限。这些不足正是本研究的创新之处。
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来源期刊
Microelectronics International
Microelectronics International 工程技术-材料科学:综合
CiteScore
1.90
自引率
9.10%
发文量
28
审稿时长
>12 weeks
期刊介绍: Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details. Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are: • Advanced packaging • Ceramics • Chip attachment • Chip on board (COB) • Chip scale packaging • Flexible substrates • MEMS • Micro-circuit technology • Microelectronic materials • Multichip modules (MCMs) • Organic/polymer electronics • Printed electronics • Semiconductor technology • Solid state sensors • Thermal management • Thick/thin film technology • Wafer scale processing.
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