Tailoring the optoelectronic properties of PZT through the modulation of the thin film

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-03-26 DOI:10.1016/j.sse.2024.108906

Z. Li, K. Yao, M. Ashtar, Y. Yang, D. Cao

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引用次数: 0

Abstract

Ferroelectric materials have great promise for use in photodetectors due to their built-in electric field-assisted carrier separation and switchable polarization properties. Carrier separation efficiency is a decisive factor in evaluating photodetector performance. The photodetector optoelectronic performance can be enhanced further by optimizing the thickness of the ferroelectric film to take full advantage of the switchable polarization properties of the ferroelectric material, and by enhancing the built-in electric field to drive carrier separation. In this work, we optimize the performance of PbZr_0.52Ti_0.48O₃ (PZT) photodetectors by modulating the thickness of the film. It is observed that thicker ferroelectric films have lower coercivity fields, which are more favorable for ferroelectric domain switching. On this basis, the ferroelectric properties of ferroelectric PZT films were optimized by thickness tuning, and the photodetection performance of PZT-based self-powered photodetectors was explored. It is found that the polarization enhances the internal electric field, driving photogenerated carrier separation and improving the self-powered current, while also selectively enhancing photodetectivity for devices of different thicknesses. Additionally, both film thickness and ferroelectric polarization significantly impact the response time.

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通过调制薄膜定制 PZT 的光电特性

铁电材料因其内置的电场辅助载流子分离和可切换偏振特性，在光电探测器中大有可为。载流子分离效率是评估光电探测器性能的决定性因素。通过优化铁电薄膜的厚度，充分利用铁电材料的可切换极化特性，并通过增强内置电场来驱动载流子分离，可以进一步提高光电探测器的光电性能。在这项研究中，我们通过调节薄膜厚度来优化 PbZr0.52Ti0.48O3 (PZT) 光电探测器的性能。据观察，较厚的铁电薄膜具有较低的矫顽力场，更有利于铁电畴切换。在此基础上，通过厚度调节优化了铁电 PZT 薄膜的铁电特性，并探索了基于 PZT 的自供电光电探测器的光探测性能。研究发现，极化可增强内部电场，推动光生载流子分离并改善自供电电流，同时还可选择性地增强不同厚度器件的光探测性能。此外，薄膜厚度和铁电极化都会对响应时间产生显著影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.