Hyeon Soo Ahn , Donguk Kim , Jan Genoe , Jiwon Lee
{"title":"Pinning voltage model of vertical pinned photodiode for Dual-Pixel image sensor","authors":"Hyeon Soo Ahn , Donguk Kim , Jan Genoe , Jiwon Lee","doi":"10.1016/j.sse.2024.108919","DOIUrl":null,"url":null,"abstract":"<div><p>This paper presents a simple solution for the pinning voltage of vertical pinned photodiode used in a dual-pixel configuration for phase-detection autofocus applications. Analytic solution of the conventional square deep photodiode has been presented elsewhere. However, this model cannot be adopted to dual pixel where a square pixel contains two rectangular photodiodes. Therefore, we propose a simple analytical model for the rectangular deep photodiode for dual pixels and validate its accuracy by TCAD simulations. The presented model accurately predicts the pinning voltage and potential inside the deep photodiode for dual pixels, thereby confirming its usefulness in the ab-initio design of the pixel as well as in the analysis of the photodiode design.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"216 ","pages":"Article 108919"},"PeriodicalIF":1.4000,"publicationDate":"2024-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000686","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
This paper presents a simple solution for the pinning voltage of vertical pinned photodiode used in a dual-pixel configuration for phase-detection autofocus applications. Analytic solution of the conventional square deep photodiode has been presented elsewhere. However, this model cannot be adopted to dual pixel where a square pixel contains two rectangular photodiodes. Therefore, we propose a simple analytical model for the rectangular deep photodiode for dual pixels and validate its accuracy by TCAD simulations. The presented model accurately predicts the pinning voltage and potential inside the deep photodiode for dual pixels, thereby confirming its usefulness in the ab-initio design of the pixel as well as in the analysis of the photodiode design.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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