Analysis of electrical and hysteresis characteristics of flexible OTFT using solution-processable DPP-DTT polymer and Parylene-C

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-03-31 DOI:10.1016/j.sse.2024.108922

Yoojeong Ko, Hyo-Won Jang, Hyeok Kim, Dong-Wook Park

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引用次数: 0

Abstract

Organic thin-film transistors (OTFTs) fabricated on Parylene-C substrates have the advantages of a simple process, low cost, and flexible characteristics. This study introduces the manufacturing method and electrical characteristics of an OTFT using organic materials as the substrate, gate dielectric, and channel material. PDPP2T-TT-OD(DPP-DTT) is used as the channel material, which is a highly mobile p-type polymer with good air stability. The proposed OTFT device has flexible characteristics because it is fabricated on a Parylene-C substrate and can be used even in a curved state. Furthermore, the manufacturing process was largely achieved via a simple, low-cost solution process using spin-coating and photolithography with a photo-curable material. Under flat conditions, the threshold voltage (V_TH) is approximately –3 V, the average I_ON/I_OFF ratio is approximately 10⁵, and the mobility is 0.84 cm²/Vs.

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使用可溶液加工的 DPP-DTT 聚合物和对二甲苯-C 分析柔性 OTFT 的电气和磁滞特性

在对二甲苯-C 衬底上制造的有机薄膜晶体管（OTFT）具有工艺简单、成本低廉、特性灵活等优点。本研究介绍了以有机材料作为衬底、栅极电介质和沟道材料的 OTFT 的制造方法和电气特性。沟道材料采用了 PDPP2T-TT-OD(DPP-DTT)，它是一种具有良好空气稳定性的高流动性 p 型聚合物。所提出的 OTFT 器件具有灵活的特性，因为它是在对二甲苯-C 衬底上制造的，即使在弯曲状态下也能使用。此外，制造工艺主要是通过使用光固化材料进行旋涂和光刻的简单、低成本解决方案实现的。在平坦条件下，阈值电压（VTH）约为-3 V，平均离子/离子交换比约为 105，迁移率为 0.84 cm2/Vs。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.