Over 43%-power-efficiency GaInN-based photoelectric transducer on free-standing GaN substrate for optical wireless power transmission system

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Semiconductor Science and Technology Pub Date : 2024-03-07 DOI:10.1088/1361-6641/ad2d62

Takahiro Fujisawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi

{"title":"Over 43%-power-efficiency GaInN-based photoelectric transducer on free-standing GaN substrate for optical wireless power transmission system","authors":"Takahiro Fujisawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi","doi":"10.1088/1361-6641/ad2d62","DOIUrl":null,"url":null,"abstract":"We investigated the GaInN-based photoelectric transducers (PTs) aiming at the application to optical wireless power transmission systems. A PT device structure with Ga0.9In0.1N multiple-quantum-wells (MQWs) as a light absorption layer was grown on a free-standing GaN substrate by metalorganic chemical vapor deposition and subjected to the device fabrication. The PT performance was evaluated via the two-terminal current-density vs. voltage characteristics taken under a monochromatic light illumination. The fabricated PT devices exhibited a high open-circuit voltage of approximately 2.3 V and a high shunt resistance of 41 kΩcm2, thanks to its good material qualities. In addition, its surface reflection was markedly suppressed by an adoption of a wet surface treatment and an anti-reflection coating, resulting in a high external quantum efficiency of 90% and a high short-circuit current density of 1.4 mAcm−2. Through the above investigation, a high power-conversion efficiency as great as 43.7% was achieved for the GaInN MQW PTs at a light illumination with 390 nm in wavelength and 5 mWcm−2 in optical power density.","PeriodicalId":21585,"journal":{"name":"Semiconductor Science and Technology","volume":"49 1","pages":""},"PeriodicalIF":1.9000,"publicationDate":"2024-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad2d62","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

We investigated the GaInN-based photoelectric transducers (PTs) aiming at the application to optical wireless power transmission systems. A PT device structure with Ga_0.9In_0.1N multiple-quantum-wells (MQWs) as a light absorption layer was grown on a free-standing GaN substrate by metalorganic chemical vapor deposition and subjected to the device fabrication. The PT performance was evaluated via the two-terminal current-density vs. voltage characteristics taken under a monochromatic light illumination. The fabricated PT devices exhibited a high open-circuit voltage of approximately 2.3 V and a high shunt resistance of 41 kΩcm², thanks to its good material qualities. In addition, its surface reflection was markedly suppressed by an adoption of a wet surface treatment and an anti-reflection coating, resulting in a high external quantum efficiency of 90% and a high short-circuit current density of 1.4 mAcm⁻². Through the above investigation, a high power-conversion efficiency as great as 43.7% was achieved for the GaInN MQW PTs at a light illumination with 390 nm in wavelength and 5 mWcm⁻² in optical power density.

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独立式氮化镓基底上功率效率超过 43% 的氮化镓基光电传感器，用于光无线输电系统

我们研究了基于氮化镓的光电传感器（PT），旨在将其应用于光无线输电系统。通过金属有机化学气相沉积法，在独立的氮化镓衬底上生长出以 Ga0.9In0.1N 多量子阱（MQW）为光吸收层的光电传感器器件结构，并进行了器件制造。在单色光照明下，通过两端电流密度与电压的关系特性对 PT 性能进行了评估。由于材料质量好，制作出的 PT 器件具有约 2.3 V 的高开路电压和 41 kΩcm2 的高分流电阻。此外，通过采用湿表面处理和抗反射涂层，其表面反射得到了明显抑制，从而实现了 90% 的高外部量子效率和 1.4 mAcm-2 的高短路电流密度。通过上述研究，在波长为 390 nm、光功率密度为 5 mWcm-2 的光照下，GaInN MQW PTs 的功率转换效率高达 43.7%。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.