Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2024-03-25 DOI:10.1109/TNANO.2024.3381478

Yi-Xuan Chen;Yi-Lin Wang;Fu-Jyuan Li;Shu-Jui Chang;Tsung-En Lee;Chao-Ching Cheng;Meng-Chien Lee;Hui-Hsuan Li;Yu-Hsien Lin;Chao-Hsin Chien

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Abstract

In this work, we systematically investigated the effect of oxygen treatment on the material and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O ₂ plasma and rapid thermal oxidation (RTO). With RTO treatment, the electrical characteristics of the IWO-TFTs remarkably depicted a subthreshold swing ( S.S. ) of 122.5 mV/decade, an I _on / I _off of around 4.7×10 ⁸ , and more superior immunity stress-induced degradation. According to the X-ray photoelectron spectroscopy (XPS) results under the RTO treatment condition, the lowest vacancy content and the highest Tungsten-Oxide (W-O) bond content were observed. It indicated that the RTO treatment was more effective in reducing the number of oxygen vacancies and stabilizing the bonding structure of IWO films. As a result, the IWO TFTs subjected to RTO treatment exhibited improved performance and enhanced reliability.

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氧气处理对 IWO 薄膜晶体管电气性能和可靠性的影响

在这项工作中，我们系统地研究了氧气处理对氧化铟-钨薄膜晶体管（IWO-TFTs）材料和电气特性的影响。经过 RTO 处理后，IWO-TFT 的电学特性明显改善，阈下摆幅（S.S. ）达到 122.5 mV/decade，Ion/Ioff 约为 4.7×108，并且具有更强的抗应力降解能力。X 射线光电子能谱（XPS）结果显示，在 RTO 处理条件下，空位含量最低，钨-氧化物（W-O）键含量最高。这表明 RTO 处理能更有效地减少氧空位的数量，稳定 IWO 薄膜的键合结构。因此，经过 RTO 处理的 IWO TFT 表现出更高的性能和可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.