Methodology for parameters extraction with undoped junctionless EZ-FETs

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-03-11 DOI:10.1016/j.sse.2024.108897

N. Zerhouni Abdou , S. Reboh , L. Brunet , M. Alepidis , P. Acosta Alba , S. Cristoloveanu , I. Ionica

引用次数: 0

Abstract

The junctionless EZ-FET is a simple FDSOI-like device that requires only two lithography levels and standard processing steps. With its simplified architecture and fabrication flow, and using undoped source and drain terminals, the device allows for a fast electrical evaluation of semiconductor films on insulators (SOI) and gate stacks. This paper describes an electrical model that reproduces the peculiar transfer characteristics of a junctionless EZ-FET. The model is then simplified to develop a pragmatic parameter extraction methodology. This methodology is experimentally validated and provides the electrical properties of SOI films (mobility, threshold voltage) for both electrons and holes.

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无掺杂结 EZ-FET 参数提取方法

无结 EZ-FET 是一种类似 FDSOI 的简单器件，只需要两个光刻层和标准加工步骤。该器件采用简化的结构和制造流程，使用未掺杂的源极和漏极，可对绝缘体上的半导体薄膜（SOI）和栅堆进行快速电气评估。本文介绍了一个能再现无结 EZ-FET 特殊传输特性的电气模型。然后对模型进行了简化，从而开发出一种实用的参数提取方法。该方法经过实验验证，可提供 SOI 薄膜电子和空穴的电特性（迁移率、阈值电压）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.