Fermi-Level Splitting-Induced Light-Intensity-Dependent Recombination in Fully Ultra-Wide Bandgap Deep-Ultraviolet Photodetector

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Wanyu Ma;Maolin Zhang;Lei Wang;Shan Li;Lili Yang;Zeng Liu;Yufeng Guo;Weihua Tang
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引用次数: 0

Abstract

Ga2O3-based heterojunction features the capability of self-driven detection, which is reckoned as a promising candidate for the next-generation deep-ultraviolet (DUV) sensing scenarios. Heterojunction consisting of fully ultra-wide bandgap (UWB) semiconductors would prevent additional response in the near-ultraviolet band. In this work, a $\beta $ -Ga2O3/AlN heterojunction photodetector is constructed and its operating mechanisms are investigated. By measuring its static current-voltage (I-V) and dynamic current-time (I-t) characteristics, the detection performance, including a photo-to-dark current ratio of $8.6\times 10\,\,^{\mathrm{ 5}}$ , a responsivity of 0.41 mA/W, a specific detectivity of $3.4\times 10\,\,^{\mathrm{ 12}}$ Jones, and an external quantum efficiency of 0.2% were achieved under 0 V bias, indicating that the proposed device realized high-performance self-driven detection. Moreover, this work demonstrated the impact of Fermi-level splitting introduced by the enhanced photo illumination on the carrier recombination and the sensing performance. With the increase of light intensity, Fermi levels are separated and available recombination centers are increased, leading to the enhancement of the recombination process and the variation of detection properties. Consequently, this work highlights the potential of the fully UWB heterojunction and provides further optimization guidelines.
全超宽带隙深紫外光探测器中的费米级分裂诱导光强相关性重组
基于 Ga2O3 的异质结具有自驱动探测能力,被认为是下一代深紫外(DUV)传感方案的理想候选材料。由全超宽带隙(UWB)半导体组成的异质结将阻止近紫外波段的额外响应。在这项工作中,构建了一个 $\beta $ -Ga2O3/AlN 异质结光电探测器,并对其工作机制进行了研究。通过测量其静态电流-电压(I-V)和动态电流-时间(I-t)特性,探测性能包括光暗电流比为 8.6 (times 10\\,^\{mathrm{ 5}}$)、响应率为 0.在 0 V 偏置下,实现了 41 mA/W、3.4 倍于 10,\,^{mathrm{ 12}}$ Jones 的特定检测率和 0.2% 的外部量子效率,表明所提出的器件实现了高性能的自驱动检测。此外,这项工作还证明了增强光照引入的费米级分裂对载流子重组和传感性能的影响。随着光照强度的增加,费米级被分离,可用的重组中心增加,从而导致重组过程的增强和检测性能的变化。因此,这项工作凸显了全超宽带异质结的潜力,并为进一步优化提供了指导。
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来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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