Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-03-14 DOI:10.1109/JEDS.2024.3375867

Yayi Chen;Xingji Liu;Dengyun Lei;Yuan Liu;Rongsheng Chen;Yao Ni;Hoi-Sing Kwok;Wei Zhong

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引用次数: 0

Abstract

The compatibility of the advanced BSIM-CMG to the low frequency noise (LFN) simulation in amorphous IZO TFTs is evaluated over subthreshold and linear regions. Two kinds of devices with SiO2-SiNx and Al2O3 gate insulators are studied. In these devices, the 1/f noise is confirmed as the main component of LFN. Then the dominated origin of the 1/f noise is explained by the

$\Delta \text{N}$

model in devices with SiO2-SiNx layers, and by the

$\Delta \text{N}$

$\Delta \mu $

model in devices with Al2O3 layers, respectively. Based on these models, the interficial traps density and the Hooge’s parameters are further calculated, and then applied to the extraction of noise parameters (NOIAeff, NOIB and NOIC) in BSIM-CMG. Compared to the measured data, the simulated results indicate that the noise can be well simulated by the improved BSIM-CMG both in the subthreshold and linear regions of IZO TFTs. It provides a comprehensive evaluation on the suitability of the BSIM-CMG for 1/f noise modelling in amorphous metal oxide TFTs.

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BSIM-CMG 与非晶 InZnO TFT 亚阈值和线性区低频噪声模拟的兼容性

在亚阈值和线性区域评估了先进的 BSIM-CMG 与非晶 IZO TFT 低频噪声 (LFN) 模拟的兼容性。研究了两种具有 SiO2-SiNx 和 Al2O3 栅极绝缘体的器件。在这些器件中，1/f 噪声被确认为 LFN 的主要成分。然后，在具有 SiO2-SiNx 层的器件中，1/f 噪声的主要来源分别用 $\Delta \text{N}$ 模型解释；在具有 Al2O3 层的器件中，1/f 噪声的主要来源用 $\Delta \text{N}$ - $\Delta \mu $ 模型解释。在这些模型的基础上，进一步计算了界面陷阱密度和 Hooge 参数，然后将其应用于 BSIM-CMG 中噪声参数（NOIAeff、NOIB 和 NOIC）的提取。与测量数据相比，模拟结果表明改进后的 BSIM-CMG 可以很好地模拟 IZO TFT 在亚阈值区和线性区的噪声。这为 BSIM-CMG 在非晶态金属氧化物 TFT 的 1/f 噪声建模中的适用性提供了全面的评估。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.