A Comprehensive Evaluation of Time-Dependent Dielectric Breakdown of CuAl₂ on SiO₂ for Advanced Interconnect Application

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-12-07 DOI:10.1109/TDMR.2023.3340231

Toshihiro Kuge;Masataka Yahagi;Junichi Koike

引用次数: 0

Abstract

The intermetallic compound CuAl2 is a promising alternative to advanced Cu interconnections because of low electrical resistivity, short electron mean free path, good electromigration reliability, and good gap-filling property. In this study, to further examine the feasibility of CuAl2 interconnects for future technology node, a comprehensive study of the time-dependent dielectric breakdown (TDDB) was conducted on CuAl2 and compared with NiAl and Cu/TaN. The self-formation of a proper thickness of an AlOx interface layer by reaction with SiO2 brought about excellent TDDB reliability in CuAl2/SiO2. Voltage ramp test was also carried out to understand the electron transport mechanism in CuAl2 stressed under the same condition as that of the TDDB test. Leakage current versus voltage relation revealed the Cu ion drift into SiO2, which gave rise to Schottky emission as an electron transport mechanism across SiO2 and the accumulation of Cu ions eventually led to TDDB failure.

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全面评估用于先进互联应用的 SiO₂上 CuAl₂ 随时间变化的介电损耗

金属间化合物 CuAl2 具有电阻率低、电子平均自由路径短、电迁移可靠性好和良好的间隙填充特性等优点，因此有望成为先进铜互连的替代品。为了进一步研究 CuAl2 互连在未来技术节点中的可行性，本研究对 CuAl2 的随时间变化的介质击穿（TDDB）进行了全面研究，并与 NiAl 和 Cu/TaN 进行了比较。通过与二氧化硅反应自形成适当厚度的氧化铝界面层，为 CuAl2/SiO2 带来了出色的 TDDB 可靠性。在与 TDDB 试验相同的条件下，还进行了电压斜坡试验，以了解受压 CuAl2 中的电子传输机制。泄漏电流与电压的关系表明，Cu 离子漂移到了 SiO2 中，从而产生了跨 SiO2 的肖特基发射电子传输机制，Cu 离子的积累最终导致了 TDDB 失效。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.