Detection and Analysis of Stress Wave in MOSFET Under Gate-Source Overvoltage Failure

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2023-12-21 DOI:10.1109/TDMR.2023.3345306

Guangxin Wang;Yunze He;Xuefeng Geng;Longhai Tang;Songyuan Liu;Qiying Li;Kai Zhang

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引用次数: 0

Abstract

As a real-time, online, and non-invasive monitoring method, acoustic emission (AE) monitoring technology has a promising future in the condition monitoring and fault diagnosis of power devices such as power MOSFETs. Stress waves are generated when power MOSFETs are turned on and off. Currently, most scholars have only researched the influence of circuit parameters on stress waves in normal devices or the relationship between stress waves and the aging state of devices or modules. However, the correlation between the characteristics of the stress wave and the specific failures inside the device has not been determined. As a result, the experiment for gate-source overvoltage failure was carried out in this work. The differential acoustic emission sensor was used to acquire stress waves of power MOSFETs under different gate-source voltages, including stress waves during chip overvoltage failure. The characteristics of stress waves are analyzed from the perspectives of time-domain and frequency-domain, and it can be concluded that the time-domain peak-to-peak value, signal energy, and wavelet peak value of the stress wave during the failure process are significantly different from those under normal conditions. The experimental results laid the groundwork for making a connection between device failures and the characteristics of the stress wave, which indicates that it will be possible to apply the acoustic emission monitoring technology to the fault diagnosis of power devices in the future.

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栅源过压故障下 MOSFET 中应力波的检测与分析

作为一种实时、在线和非侵入式监测方法，声发射（AE）监测技术在功率 MOSFET 等功率器件的状态监测和故障诊断方面前景广阔。功率 MOSFET 在开启和关闭时会产生应力波。目前，大多数学者只研究了正常器件中电路参数对应力波的影响，或应力波与器件或模块老化状态之间的关系。然而，应力波的特性与器件内部具体故障之间的相关性尚未确定。因此，本研究对栅源过压失效进行了实验。使用差分声发射传感器采集功率 MOSFET 在不同栅源电压下的应力波，包括芯片过压失效时的应力波。从时域和频域的角度分析了应力波的特性，可以得出结论：失效过程中应力波的时域峰峰值、信号能量和小波峰峰值与正常条件下的应力波有明显不同。实验结果为建立设备故障与应力波特征之间的联系奠定了基础，这预示着未来将有可能把声发射监测技术应用到电力设备的故障诊断中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.