Investigation of low to high-dose gamma-ray (γ-ray) radiation effects on indium-zinc-oxide (IZO) thin film transistor (TFT)

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-02-28 DOI:10.1016/j.sse.2024.108884

Do-Kywn Kim , Dong-Seok Kim , Tae-Eon Kim , Min-Ju Kim , Seung Heon Shin

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引用次数: 0

Abstract

This paper investigates the impact of gamma-ray (γ-ray) radiation at doses of 100 krads and 1,000 krads on amorphous indium-zinc-oxide (IZO) thin-film transistors (TFTs). The IZO channel's properties are analyzed using X-ray photoelectron spectroscopy (XPS) before and after radiation. Following 100 krads exposure, the oxygen vacancy (V_O) peak in the IZO channel increases from 41.8 % to 59.4 % due to the generation of electron-hole pairs. Additionally, the threshold voltage of the IZO TFT negatively shifts from 10.1 V to 5.5 V due to positive charges in the gate oxide layer. Following exposure to 1,000 krads gamma-ray radiation, the threshold voltage of 8.8 V is similar to that of 9.8 V for the non-irradiated TFT. Remarkably, the subthreshold swing (SS) remains unchanged, while the maximum transconductance (g_m,max) is improved by 10.0 % and effective mobility (µ_FE) by 6.1 %. These enhancements result from the diffusion of indium, zinc, and oxygen into the gate oxide layer thanks to the self-heating effect at a dose of 1,000 krads. Based on the results, our findings indicate the IZO TFT shows a significant potential for a radiation-hardness electronic device in harsh environments.

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低剂量至高剂量伽马射线（γ-射线）辐射对铟锌氧化物（IZO）薄膜晶体管（TFT）影响的研究

本文研究了剂量为 100 krads 和 1,000 krads 的伽马射线（γ-射线）辐射对非晶铟锌氧化物（IZO）薄膜晶体管（TFT）的影响。在辐射前后，我们使用 X 射线光电子能谱 (XPS) 分析了 IZO 沟道的特性。经过 100 krads 辐射后，由于电子-空穴对的产生，IZO 沟道中的氧空位（V）峰从 41.8% 上升到 59.4%。此外，由于栅极氧化层中的正电荷，IZO TFT 的阈值电压从 10.1 V 负向移动到 5.5 V。在接受 1,000 krads 伽马射线辐射后，8.8 V 的阈值电压与未接受辐射的 TFT 的 9.8 V 电压相似。值得注意的是，阈下摆幅（SS）保持不变，而最大跨导（g）提高了 10.0%，有效迁移率（µ）提高了 6.1%。这些提高是由于铟、锌和氧在 1,000 krads 剂量的自热效应下扩散到栅极氧化层的结果。根据这些结果，我们的研究结果表明，IZO TFT 在恶劣环境下作为抗辐射电子器件具有巨大潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.