Eco-Friendly Dry-Cleaning and Diagnostics of Silicon Dioxide Deposition Chamber

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Semiconductor Manufacturing Pub Date : 2024-02-14 DOI:10.1109/TSM.2024.3365827

Surin An;Jeong Eun Choi;Ju Eun Kang;Jiseok Lee;Sang Jeen Hong

{"title":"Eco-Friendly Dry-Cleaning and Diagnostics of Silicon Dioxide Deposition Chamber","authors":"Surin An;Jeong Eun Choi;Ju Eun Kang;Jiseok Lee;Sang Jeen Hong","doi":"10.1109/TSM.2024.3365827","DOIUrl":null,"url":null,"abstract":"Semiconductor industry is experiencing a rising demand for environmentally friendly processes with the emphasis on green policies and worldwide environmental sustainability. Nitrogen trifluoride (NF3), the most common plasma chamber cleaning agent gas, poses a significant concern as a potent greenhouse gas since it has global warming potential (GWP), 740 times and 6 times higher than that CO2 and N2O. This study investigated the exhaust gas using quadrupole mass spectroscopy (QMS) and analyzed the change in cleaning speed and the type of exhaust gas through plasma monitoring using optical mass spectroscopy (OES). The objective is to lower the use of the amount of NF3 gas in chamber cleaning process to partially contribute the environmental sustainability in the point of semiconductor manufacturing. When a small amount of N2 was added to NF3 whose ratio of 7:23, the cleaning efficiency reached to 90% compared to NF3 gas alone. Addition of N2 positively affected electron density and temperature to increase the F-radical in remote plasma system. In conclusion, 18% of NF3 usage amount was reduced during the Sio2 deposition chamber cleaning process.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"37 2","pages":"207-221"},"PeriodicalIF":2.3000,"publicationDate":"2024-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Semiconductor Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10436417/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

Semiconductor industry is experiencing a rising demand for environmentally friendly processes with the emphasis on green policies and worldwide environmental sustainability. Nitrogen trifluoride (NF3), the most common plasma chamber cleaning agent gas, poses a significant concern as a potent greenhouse gas since it has global warming potential (GWP), 740 times and 6 times higher than that CO2 and N2O. This study investigated the exhaust gas using quadrupole mass spectroscopy (QMS) and analyzed the change in cleaning speed and the type of exhaust gas through plasma monitoring using optical mass spectroscopy (OES). The objective is to lower the use of the amount of NF3 gas in chamber cleaning process to partially contribute the environmental sustainability in the point of semiconductor manufacturing. When a small amount of N2 was added to NF3 whose ratio of 7:23, the cleaning efficiency reached to 90% compared to NF3 gas alone. Addition of N2 positively affected electron density and temperature to increase the F-radical in remote plasma system. In conclusion, 18% of NF3 usage amount was reduced during the Sio2 deposition chamber cleaning process.

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二氧化硅沉积室的环保干洗和诊断技术

随着对绿色政策和全球环境可持续性的重视，半导体行业对环保工艺的需求日益增长。三氟化氮（NF3）是最常见的等离子体室清洗剂气体，由于其全球升温潜能值（GWP）比二氧化碳和一氧化二氮分别高出 740 倍和 6 倍，因此作为一种强烈的温室气体而备受关注。本研究使用四极质谱（QMS）对废气进行了调查，并通过使用光学质谱（OES）对等离子体进行监测，分析了清洗速度的变化和废气的类型。目的是在腔室清洗过程中降低 NF3 气体的使用量，从而在一定程度上促进半导体制造点的环境可持续性。当在比例为 7:23 的 NF3 中加入少量 N2 时，与单独使用 NF3 气体相比，清洗效率达到 90%。N2 的加入对电子密度和温度产生了积极影响，从而增加了远程等离子体系统中的 F-自由基。总之，在 Sio2 沉积室清洗过程中，NF3 的用量减少了 18%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Semiconductor Manufacturing 工程技术-工程：电子与电气

CiteScore

5.20

自引率

11.10%

发文量

101

审稿时长

3.3 months

期刊介绍： The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.