Electro-Mechanical Properties of Molybdenum Thin Film on Polyethylene Terephthalate Subjected to Tensile Stress

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-02-16 DOI:10.1109/TDMR.2024.3366782

Atif Alkhazali;Mohammad M. Hamasha;Haitham Khaled;Awni Alkhazaleh;Morad Etier

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引用次数: 0

Abstract

Molybdenum chips are vital in manufacturing photovoltaic cells and electronics because they offer a combination of high reliability, corrosion resistance, and exceptional electrical conductivity. These qualities make them suitable for applications demanding these characteristics. This study delves into the behavior of thin molybdenum films deposited on plastic substrates under increasing stress. Films of 100 nm and 200 nm thicknesses were stretched, revealing intricate relationships between crack formation, film thickness, and electrical conductivity. Scanning electron microscopy captured the evolution of cracks, initially forming perpendicular to stress and later branching at roughly 30 degrees, hinting at anisotropic material behavior. Thicker films displayed lower crack density and less branching, highlighting their enhanced stress resistance. Further, secondary cracks short between the original cracks was developed. Percentage change of electrical resistance mirrored this trend, gradually increasing with strain before a sharp spike and eventual disconnection due to crack-induced conductivity loss. Thinner films succumbed to failure at lower strains. These findings offer valuable insights into the design and optimization of molybdenum-based microelectronic devices and sensors, paving the way for further quantitative analysis to fully elucidate the intricate mechanisms at play.

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受拉伸应力作用的聚对苯二甲酸乙二醇酯上钼薄膜的电气机械特性

钼芯片是制造光伏电池和电子产品的重要材料，因为它们兼具高可靠性、耐腐蚀性和优异的导电性。这些特性使它们适用于要求这些特性的应用。本研究深入探讨了沉积在塑料基底上的钼薄膜在应力增加时的行为。对厚度为 100 nm 和 200 nm 的薄膜进行了拉伸，揭示了裂纹形成、薄膜厚度和导电性之间错综复杂的关系。扫描电子显微镜捕捉到了裂纹的演变过程，裂纹最初垂直于应力形成，后来大致呈 30 度分支，暗示了各向异性的材料行为。较厚的薄膜显示出较低的裂纹密度和较少的分支，突出表明它们的抗应力能力有所增强。此外，在原始裂纹之间还出现了短的次生裂纹。电阻的百分比变化也反映了这一趋势，随着应变的增加而逐渐增大，然后由于裂纹引起的导电率下降而出现尖峰并最终断开。较薄的薄膜在较低的应变下就会失效。这些发现为设计和优化基于钼的微电子器件和传感器提供了有价值的见解，为进一步进行定量分析以充分阐明复杂的作用机制铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.