Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-01-29 DOI:10.1109/TDMR.2024.3359187

Yanning Chen;Kai Wang;Jin Shao;Fang Liu;Xinhuan Yang;Jianyu Zhang;Qianqian Sang;Chuanzheng Wang;Yuanfu Zhao

引用次数: 0

Abstract

In practical electronic setups, most circuits are operating under dynamic condition, thus the aging models derived under static bias could lead to unexpected deviation from the real circumstance and even errors. Here in this paper, we studied the device degradation under long-period dynamic stress, which aims to mimic the device degradation at alternating voltages. Combined with the degradation characterization, models considering partial recovery after stress removal and degradation at different stress levels are developed. By comparing the test data with the model calculation, it can be seen that the calculation error of the model is within 3%, which meets the requirement of practical engineering. The proposed models could benefit the reliability design against dynamic hot carrier degradation for modern circuits.

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动态工作电压下热载流子降解的特性分析与建模

在实际电子设备中，大多数电路都是在动态条件下工作的，因此在静态偏置下得出的老化模型可能会与实际情况产生意想不到的偏差，甚至出现错误。在本文中，我们研究了长周期动态应力下的器件老化，旨在模拟交变电压下的器件老化。结合降解特性分析，我们建立了应力消除后的部分恢复和不同应力水平下的降解模型。通过对比测试数据和模型计算结果，可以看出模型的计算误差在 3% 以内，符合实际工程的要求。所提出的模型有利于针对现代电路的动态热载流子退化进行可靠性设计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.