Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-02-12 DOI:10.1109/JEDS.2024.3364809

Zegen Zhu;Gianni Bosi;Antonio Raffo;Giovanni Crupi;Jialin Cai

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引用次数: 0

Abstract

In this work, for the first time, a machine learning behavioral modeling methodology based on gate recurrent unit (GRU) is developed and used to model and then analyze the kink effects (KEs) in the output reflection coefficient

$(S_{22})$

and the short-circuit current gain

$(h_{21})$

of an advanced microwave transistor. The device under test (DUT) is a 0.25-

$\mu \text{m}$

gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) substrate, which has a large gate periphery of 1.5 mm. The scattering (S-) parameters of the DUT are measured at a frequency up to 65 GHz and at an ambient temperature up to 200°C. The proposed model can accurately reproduce the KEs in

$S_{22}$

and in

$h_{21}$

, enabling an effective analysis of their dependence on the operating conditions, bias point and ambient temperature. It is worth noticing that the proposed transistor model shows also good performance in both interpolation and extrapolation test.

查看原文本刊更多论文

面向 S22 和 h21 扭结效应分析的 GaN HEMT 准确建模：一种有效的机器学习方法

本研究首次开发了一种基于栅递归单元（GRU）的机器学习行为建模方法，并将其用于建模和分析先进微波晶体管输出反射系数$(S_{22})$和短路电流增益$(h_{21})$中的扭结效应（KEs）。被测器件（DUT）是碳化硅（SiC）衬底上的 0.25- $\mu \text{m}$氮化镓（GaN）高电子迁移率晶体管（HEMT），具有 1.5 mm 的大栅极外围。在高达 65 GHz 的频率和高达 200°C 的环境温度下测量了 DUT 的散射 (S-) 参数。所提出的模型能够准确再现 $S_{22}$ 和 $h_{21}$ 中的 KEs，从而能够有效分析它们对工作条件、偏置点和环境温度的依赖性。值得注意的是，所提出的晶体管模型在内插法和外推法测试中也表现出良好的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.