Design and Thermal Analysis of 2.5D and 3-D Integrated System of a CMOS Image Sensor and a Sparsity-Aware Accelerator for Autonomous Driving

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Janak Sharda;Madison Manley;Ankit Kaul;Wantong Li;Muhannad Bakir;Shimeng Yu
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引用次数: 0

Abstract

For the autonomous driving application, data movement has increased rapidly between a CMOS Image sensor (CIS) and the processor due to increase in image resolution. Advanced packaging techniques like 2.5D/3D integration have been proposed to reduce the data movement energy between memory and processor. In this work, we explore the use of such techniques to integrate a CIS and a backend accelerator on a silicon interposer. The data movement energy from CIS to the accelerator is thus reduced by $100\times $ compared to using the conventional MIPI links. We perform thermal simulations to study the impact of the thermal coupling of CIS and accelerator and ensure a peak temperature increase of less than $5~^{\circ }$ C. We also vary the distance between the CIS and the processor to study the trade-offs between energy savings and peak temperature. Next, we assume the 3D stacked CIS and accelerator to reduce the data movement further and obtain an energy efficiency of 45.81 TOPS/W. Now we observe a heat dissipation challenge with an increase in the peak temperature of more than $85~^{\circ }$ C. Hence, we scale down the operational frequency and study the trade-off between performance degradation and reduction in peak temperature, while maintaining the accurate multi-object tracking on the BDD100k dataset for autonomous driving.
用于自动驾驶的 CMOS 图像传感器和稀疏感知加速器的 2.5D 和 3D 集成系统的设计与热分析
在自动驾驶应用中,由于图像分辨率的提高,CMOS 图像传感器(CIS)和处理器之间的数据传输量迅速增加。为了减少存储器和处理器之间的数据移动能量,人们提出了 2.5D/3D 集成等先进封装技术。在这项工作中,我们探讨了如何利用这些技术将 CIS 和后端加速器集成到硅集成器上。因此,与使用传统的 MIPI 链接相比,从 CIS 到加速器的数据移动能量降低了 100 倍。我们还改变了 CIS 与处理器之间的距离,以研究节能与峰值温度之间的权衡。接下来,我们假定采用三维堆叠 CIS 和加速器,以进一步减少数据移动,并获得 45.81 TOPS/W 的能效。因此,我们降低了工作频率,并研究了性能下降和峰值温度降低之间的权衡,同时保持了 BDD100k 数据集上自动驾驶的精确多目标跟踪。
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来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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