{"title":"Design and Thermal Analysis of 2.5D and 3-D Integrated System of a CMOS Image Sensor and a Sparsity-Aware Accelerator for Autonomous Driving","authors":"Janak Sharda;Madison Manley;Ankit Kaul;Wantong Li;Muhannad Bakir;Shimeng Yu","doi":"10.1109/JEDS.2024.3354621","DOIUrl":null,"url":null,"abstract":"For the autonomous driving application, data movement has increased rapidly between a CMOS Image sensor (CIS) and the processor due to increase in image resolution. Advanced packaging techniques like 2.5D/3D integration have been proposed to reduce the data movement energy between memory and processor. In this work, we explore the use of such techniques to integrate a CIS and a backend accelerator on a silicon interposer. The data movement energy from CIS to the accelerator is thus reduced by \n<inline-formula> <tex-math>$100\\times $ </tex-math></inline-formula>\n compared to using the conventional MIPI links. We perform thermal simulations to study the impact of the thermal coupling of CIS and accelerator and ensure a peak temperature increase of less than \n<inline-formula> <tex-math>$5~^{\\circ }$ </tex-math></inline-formula>\nC. We also vary the distance between the CIS and the processor to study the trade-offs between energy savings and peak temperature. Next, we assume the 3D stacked CIS and accelerator to reduce the data movement further and obtain an energy efficiency of 45.81 TOPS/W. Now we observe a heat dissipation challenge with an increase in the peak temperature of more than \n<inline-formula> <tex-math>$85~^{\\circ }$ </tex-math></inline-formula>\nC. Hence, we scale down the operational frequency and study the trade-off between performance degradation and reduction in peak temperature, while maintaining the accurate multi-object tracking on the BDD100k dataset for autonomous driving.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10403647","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10403647/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
For the autonomous driving application, data movement has increased rapidly between a CMOS Image sensor (CIS) and the processor due to increase in image resolution. Advanced packaging techniques like 2.5D/3D integration have been proposed to reduce the data movement energy between memory and processor. In this work, we explore the use of such techniques to integrate a CIS and a backend accelerator on a silicon interposer. The data movement energy from CIS to the accelerator is thus reduced by
$100\times $
compared to using the conventional MIPI links. We perform thermal simulations to study the impact of the thermal coupling of CIS and accelerator and ensure a peak temperature increase of less than
$5~^{\circ }$
C. We also vary the distance between the CIS and the processor to study the trade-offs between energy savings and peak temperature. Next, we assume the 3D stacked CIS and accelerator to reduce the data movement further and obtain an energy efficiency of 45.81 TOPS/W. Now we observe a heat dissipation challenge with an increase in the peak temperature of more than
$85~^{\circ }$
C. Hence, we scale down the operational frequency and study the trade-off between performance degradation and reduction in peak temperature, while maintaining the accurate multi-object tracking on the BDD100k dataset for autonomous driving.
期刊介绍:
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.