Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-01-30 DOI:10.1109/JEDS.2024.3359974

Stephen A. Mancini;Seung Yup Jang;Zeyu Chen;Dongyoung Kim;Alex Bialy;Balaji Raghotamacher;Michael Dudley;Nadeemullah Mahadik;Robert Stahlbush;Mowafak Al-Jassim;Woongje Sung

引用次数: 0

Abstract

Several different designs of 1.2kV-rated 4H-SiC MOSFETs have been successfully fabricated under various ion implantation conditions. Implantation conditions consisted of different P+ profiles and implantation temperatures of both room temperature (25°C) and elevated temperatures (600°C) in order to monitor subsequent lattice damage. Through the use of X-Ray topography, SEM imaging, and electrical measurements, it was shown that room temperature implanted devices can mimic the static performances of high temperature implanted MOSFETs and reduce lattice damage suffered during the fabrication process, when the dose of high energy implants are suppressed.

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使用所有 "室温 "离子注入法制造的 1.2kV 4H-SiC MOSFET 静态性能调查

在各种离子注入条件下，成功制造出了几种不同设计的 1.2kV 级 4H-SiC MOSFET。植入条件包括不同的 P+ 剖面以及室温（25°C）和高温（600°C）两种植入温度，以监测随后的晶格损伤。通过使用 X 射线形貌图、扫描电子显微镜成像和电学测量，结果表明室温植入器件可以模拟高温植入 MOSFET 的静态性能，并在抑制高能量植入剂量的情况下减少制造过程中的晶格损伤。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.