Injune Yeo;Wangxin He;Yuan-Chun Luo;Shimeng Yu;Jae-Sun Seo
{"title":"A Dynamic Power-Only Compute-in-Memory Macro With Power-of-Two Nonlinear SAR ADC for Nonvolatile Ferroelectric Capacitive Crossbar Array","authors":"Injune Yeo;Wangxin He;Yuan-Chun Luo;Shimeng Yu;Jae-Sun Seo","doi":"10.1109/LSSC.2024.3361011","DOIUrl":null,"url":null,"abstract":"Analog computing-in-memory (CIM) using emerging resistive nonvolatile memory (NVM) technologies faces challenges, such as static power consumption, current flow-induced IR drop, and the need for multiple power-hungry ADCs. In this letter, we present ferroelectric capacitive array (FCA)-based energy/area-efficient CIM macro used for charge-domain multiply-and-accumulate operations, which addresses the challenges of resistive NVM CIMs. The proposed CIM macro involves encoding ternary input activations and weights into voltages, and enabling parasitic insensitive charge readout. A power-of-two nonlinear SAR ADC is introduced, designed for energy-efficiency and hardware-friendliness. This ADC employs adaptive conversion skipping based on input voltage, resulting in fine precision for concentrated input levels and coarse conversion for sparse input levels. The proposed FCA-based CIM macro in 180-nm CMOS demonstrates \n<inline-formula> <tex-math>$16\\times 8$ </tex-math></inline-formula>\n analog MAC operation with an energy efficiency of 1.75 TOPS/W and classification accuracy of 90.2% is obtained for the CIFAR-10 dataset.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"70-73"},"PeriodicalIF":2.2000,"publicationDate":"2024-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10418459/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
Analog computing-in-memory (CIM) using emerging resistive nonvolatile memory (NVM) technologies faces challenges, such as static power consumption, current flow-induced IR drop, and the need for multiple power-hungry ADCs. In this letter, we present ferroelectric capacitive array (FCA)-based energy/area-efficient CIM macro used for charge-domain multiply-and-accumulate operations, which addresses the challenges of resistive NVM CIMs. The proposed CIM macro involves encoding ternary input activations and weights into voltages, and enabling parasitic insensitive charge readout. A power-of-two nonlinear SAR ADC is introduced, designed for energy-efficiency and hardware-friendliness. This ADC employs adaptive conversion skipping based on input voltage, resulting in fine precision for concentrated input levels and coarse conversion for sparse input levels. The proposed FCA-based CIM macro in 180-nm CMOS demonstrates
$16\times 8$
analog MAC operation with an energy efficiency of 1.75 TOPS/W and classification accuracy of 90.2% is obtained for the CIFAR-10 dataset.