Probe and Spectral Diagnostics of the Plasma of the BCl3–Cl2 Gas Medium

Q4 Engineering

Russian Microelectronics Pub Date : 2024-02-08 DOI:10.1134/s1063739723700701

D. B. Murin, I. A. Chesnokov, I. A. Gogulev, A. E. Grishkov

引用次数: 0

Abstract

The probe and spectral measurements of the plasma of the BCl₃–Cl₂ gas medium are carried out. Data are obtained on the influence of the initial composition of the gas medium on the electric field strength, gas temperature, particle concentration, and reduced electric field strength under conditions of a direct current glow discharge. The emission spectra of the plasma of the BCl₃–Cl₂ gas medium are analyzed, the main emitting components are identified, and the relationships between radiation intensities and particle concentrations are established.

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BCl3-Cl2 气体介质等离子体的探针和光谱诊断法

摘要对 BCl3-Cl2 气体介质的等离子体进行了探测和光谱测量。获得了气体介质初始成分对直流辉光放电条件下的电场强度、气体温度、粒子浓度和还原电场强度的影响数据。分析了 BCl3-Cl2 气体介质等离子体的发射光谱，确定了主要发射成分，并建立了辐射强度与粒子浓度之间的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Russian Microelectronics Materials Science-Materials Chemistry

CiteScore

0.70

自引率

0.00%

发文量

期刊介绍： Russian Microelectronics covers physical, technological, and some VLSI and ULSI circuit-technical aspects of microelectronics and nanoelectronics; it informs the reader of new trends in submicron optical, x-ray, electron, and ion-beam lithography technology; dry processing techniques, etching, doping; and deposition and planarization technology. Significant space is devoted to problems arising in the application of proton, electron, and ion beams, plasma, etc. Consideration is given to new equipment, including cluster tools and control in situ and submicron CMOS, bipolar, and BICMOS technologies. The journal publishes papers addressing problems of molecular beam epitaxy and related processes; heterojunction devices and integrated circuits; the technology and devices of nanoelectronics; and the fabrication of nanometer scale devices, including new device structures, quantum-effect devices, and superconducting devices. The reader will find papers containing news of the diagnostics of surfaces and microelectronic structures, the modeling of technological processes and devices in micro- and nanoelectronics, including nanotransistors, and solid state qubits.